Questio. Assume that a silicon-based NP diode has the following electrical field distribution. E (0)-1.12x10ʻ Viem x 10 " cm 037- מ- *,0.73x 10* cm a) What is the doping level on the P-side? b) What is the doping level on the N-side? c) If the voltage is zero at x-Xp, then what is the voltage at x0?

4.) In which mode will a diode generally not conduct electricity? a. Bidirectional Biased b. None of these c. Forward Biased d. Reversed Biased   5.) Consider the following schematic symbol of a semiconductor device: Which side is the Cathode? (Picture inserted down below) a. Side A b. Both side A and B c. Side B d. Neither side A or B   8.) Integrated circuits can be broken down into three basic categories.  Which category does an operational amplifier (or op-amp) fall into? a. Analog b. None of these c. A combination of analog and digital d. Digital

Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?

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