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- A docs.google.com/forms/d/e. Marks 8 The temperature term isn't a part of the .total current density in a semiconductor True False The random motion of holes and free electrons due to thermal agitation is called .drift True False Under the equilibrium conditions, the number of holes which are thermally generated is equal to the holes lost by .recombination True False II >3.0 2 e) Find the Hotal resistance (R) of this circuit b) If the terminals la and c) are connected to a 24.0 V DC power supply, what 1s the total current I and the curreat passing through cach recistor ? ) Caleulate the correspending voltage dpop accros s tach resistor (labet acc ordingly: R,=6.00 Q, Rz ÷4.60 2 Ry= 8.002)IMPLEMENTATION OF XOR AND XNOR GATES USING NAND GATES 1. Material Required: Logic Trainer Connecting Wires Components(IC’s): 40112. Procedure:It is clear from the logic diagram that the NAND gate implementation of XOR gate requiresfive NAND gates. You will need two quad- 2 in NAND gate ICs to perform this experiment.Gets the required number of ICs containing NAND gates and other apparatus from the labattendant. Plug in the ICs in the breadboard of the Logic Trainer. Connect 5Vdc power supplyand ground on pins 14 and 7 respectively. For other pin configuration consult the data sheet (wehave already used NAND gates in the first lab so it should not be a problem). Wire your circuitaccording to the logic diagram for XOR gate as given above. Once you have wired the circuit,check it with your instructor and, if approved, power up your circuit. The outputs should beconnected to the LEDs on the Logic Trainer for monitoring purpose. Apply different inputcombinations at the input and note…
- Semiconductors have negative temperature coefficient of resistance. Explain its meaning.Q2/ If the resistivity of pure silicon is 2300 (0. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 8.61 x 10 mol Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cmQ2/ If the resistivity of pure silicon is 2300 (2. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 8.61 x 10 mol- Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cm3
- What’s the difference between electrons traveling in a semiconductor vs electrons traveling in a vacuum? please explain in terms of potentials, the type of transport, and velocities they can attain?Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 8.61 x 10 mol Atomie mass of silicon is 28.08 g/mol, mass density is 2.33 g/em1. A transistor radio uses 0.20 A of current when it is operated by a 3.0-volt battery. (a) What is the resistance of the radio circuit? (b) What electrical energy (in Joule) is dissipated in 20 minutes of operation?
- Q2/ If the resistivity of pure silicon is 2300 (N. m) and assuming that the valance electrons of silicon is 4. Let T = 300 K. (a) Calculate the electron density per cubic meter (b) Calculate the electron mobility when the electron density is doubled. Note: Avogadro's number is 6.02 x 1023mol Atomic mass of silicon is 28.08 g/mol, mass density is 2.33 g/cmQuestion 1 a) What is Hall Effect? Explain briefly. b) Show that the number density n of free electrons in a conductor wire is given in terms of the Hall electric field strength E, and the current density J, as n=JB/(eE). (Here we have J=i/A; i is the electric current intensity, and A is the cross-sectional area of the wire.) c) Calculate the voltage V sideway across the conductor given the following. The conductor wire has a square cross section of side d=150 µm. (Note 1 um= 10-6 m.) The magnetic field applied to the conductor has the strength B= 0.60 Tesla. The current going through the conductor is i = 25 A. The density of free electrons in the conductor is n= 8.47 x 1028 electrons/m³. Note further that we have by definition V=Ed.using the transfer function Vo(s)/V:(s) using Simulink and matlab For C=1.4 mF, L= 0.06 H, R1 = 120 2, R2 = 90 2, and v=120 V. The resistors are nonlinear with their saturation limits being +80 V and -60 V. R R