Q3 TREF VDD 6+ 5 22 li Va Figure 1: Practical implementation of the common-source amplifier with a current-source load The CMOS amplifier in Fig 1 is fabricated in the 0.13-μm CMOS process whose parameters are specified in Table K.1 (Appendix K) in the textbook. All transistors have L = 0.4-um and are operated at Vov = 0.15 V, IREF= 100 μA and VDD 1.3V. (a) Find the dc component of v, and the W/L ratios of the transistors. (b) (b) Determine the small-signal voltage gain. (c) What is the allowable range of signal swing at the output for almost-linear operation? (d) If the current-source load is replaced with a resistance RD connected to a power supply V'DD as shown in Fig. 1, find the values of RD and V'DD so that ID, the voltage gain, and the output signal swing remain unchanged.

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Table K.1 Typical Values of CMOS Device Parameters
0.8 μm
0,5 μm
0.25 μm
0.18 μm
0.13 μm
65 nm
28 nm
NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS
Parameter
Fax (nm)
Car (fF/μm²)
(cm²/V-s)
#Car (HAV²)
V10 (V)
VDD (V)
VAI(VALm)
15 15
2.3
2.3
250
550
127 58
0.7
5
25
Cop (fF/μm) 0.2
-0.7
5
20
0.2
9
3.8
9
3.8
180
500
190
68
0.7
-0.8
3.3 3.3
20
0.4
10
0.4
6
5.8
460
267
0.5
2.5
5
0.3
6
5.8
160
93
-0.6
2.5
6
0.3
4
8.6
450
387
0.5
1.8
5
0.37
4
8.6
100
86
-0.5
1.8
6
0.33
2.7 2.7
12.8
12.8
400 100
511
0.4
1.3
5
0.36
128
-0.4
1.3
6
0.33
1.4 1.4
25
25
40
216
540
0.35
1.0
3
0.33
1.4 1.4
34
34
220 200
100 750
-0.35
0.3
1.0 0.9
3
1.5
0.31
0.4
680
-0.3
0.9
15
0.4
Transcribed Image Text:Table K.1 Typical Values of CMOS Device Parameters 0.8 μm 0,5 μm 0.25 μm 0.18 μm 0.13 μm 65 nm 28 nm NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS NMOS PMOS Parameter Fax (nm) Car (fF/μm²) (cm²/V-s) #Car (HAV²) V10 (V) VDD (V) VAI(VALm) 15 15 2.3 2.3 250 550 127 58 0.7 5 25 Cop (fF/μm) 0.2 -0.7 5 20 0.2 9 3.8 9 3.8 180 500 190 68 0.7 -0.8 3.3 3.3 20 0.4 10 0.4 6 5.8 460 267 0.5 2.5 5 0.3 6 5.8 160 93 -0.6 2.5 6 0.3 4 8.6 450 387 0.5 1.8 5 0.37 4 8.6 100 86 -0.5 1.8 6 0.33 2.7 2.7 12.8 12.8 400 100 511 0.4 1.3 5 0.36 128 -0.4 1.3 6 0.33 1.4 1.4 25 25 40 216 540 0.35 1.0 3 0.33 1.4 1.4 34 34 220 200 100 750 -0.35 0.3 1.0 0.9 3 1.5 0.31 0.4 680 -0.3 0.9 15 0.4
Q3
TREF
VDD
l₁
-O
(a)
Figure 1: Practical implementation of the common-source amplifier with a current-source load
The CMOS amplifier in Fig 1 is fabricated in the 0.13-μm CMOS process whose parameters are specified in Table
K.1 (Appendix K) in the textbook. All transistors have L = 0.4-um and are operated at Vov = 0.15 V, IREF = 100 μA
and VDD 1.3V.
(a) Find the dc component of v, and the W/L ratios of the transistors.
(b) (b) Determine the small-signal voltage gain.
(c) What is the allowable range of signal swing at the output for almost-linear operation?
(d) If the current-source load is replaced with a resistance RD connected to a power supply V'DD as shown in
Fig. 1, find the values of RD and V'DD so that ID, the voltage gain, and the output signal swing remain
unchanged.
Transcribed Image Text:Q3 TREF VDD l₁ -O (a) Figure 1: Practical implementation of the common-source amplifier with a current-source load The CMOS amplifier in Fig 1 is fabricated in the 0.13-μm CMOS process whose parameters are specified in Table K.1 (Appendix K) in the textbook. All transistors have L = 0.4-um and are operated at Vov = 0.15 V, IREF = 100 μA and VDD 1.3V. (a) Find the dc component of v, and the W/L ratios of the transistors. (b) (b) Determine the small-signal voltage gain. (c) What is the allowable range of signal swing at the output for almost-linear operation? (d) If the current-source load is replaced with a resistance RD connected to a power supply V'DD as shown in Fig. 1, find the values of RD and V'DD so that ID, the voltage gain, and the output signal swing remain unchanged.
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