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- If you know that aluminum has an atomic radius of 0.143nm and an atomic weight of 26.98g / mol || Laccording to: A. The volume of a unit cell in cubic cents B The theoretical densitySuppose that a 0.85 cm thick part of gold, which originally contains 1200 silver atoms for every 5600 gold atoms, is doped so that there are 3200 silver atoms for every 5600 gold atoms on the surface. Calculate the concentration gradient. The lattice parameter for gold is 4.0786Å. a) in% atoms / cm b) in atoms / cm^3.cm2) The Mark-Houwink-Sakurada (MHS) equation allows us to relate the intrinsic viscosity, [n], of a dilute polymer solution to the polymer viscosity-averaged molar mass, M„, if one knows the constants K and "a" (M = 1 g/mol, K and "a" depend on the polymer/solvent pair and the temperature). Use the M, and [n] data from Table 2 for the following questions. Table 2: Molar mass & intrinsic viscosity data for polystyrene M, (g/mol) [n] (mL/g) 5000 34000 61000 127000 147000 164000 182000 206000 232000 247000 76.2 258.4 371.2 628. 2 695.9 759.8 817.1 912. 3 1011.4 1039. 2
- A sample of copper has a mass of 10.68 g when measured in air. It has a mass of 9.47 g when measured in water. Answer these four questions: What is the density of the sample? How many atoms are in the sample? What is the simple volume of the space including and surrounding each atom? Assume the atoms are evenly distributed throughout the sample. That is no FCC, BCC, or HCP crystal structure. What is the diameter of each atom?5. a) Consider a GaAs pn junction, in thermal equilibrium at 300 K, under zero-bias and with dopant concentrations of Na = 1 x 1017 cm³ on the p-side of the junction and Nd = 5 x 1015 cm3 on the n-side. ɛr = 13.1 for GaAs. The cross-sectional area of the junction is 1 x 102 cm?. Determine the following junction characteristics; state your answers in this form and show all work on a separate page. Vbi = V Xp = m Energy barrier AE = eV W = Xn = |{max| = N/C m Qn = Qp = C b) Consider the GaAs pn junction as described above under a reverse-bias of 2 V. Determine the following junction characteristics; state your answers in this form and show work on a separate page. Energy barrier AE = eV W =Example 1: Find the hole concentration in N-type semiconductor when the donor concentration is 2 x1012cm-3 and intrinsic value of silicon material at T = 300° K is 1.25 x10 cm-3. ст %3D
- QUESTION 3 The solid phase of an element follows van-der Waals bonding with inter-atomic potential:Compare the GPC (gel permeation chromatography) curves for polymers "b" and "h". Which has the largest MN? 16 18 14 Elution time (min) 10 12 Not enough information to know because curves are not normalized O MN(h) > MN(b) O MN(h) about cqual to MN(b) (although MW is very different) O MN(H) MN(b)1. A model for the potential energy interaction between the two nitrogen atoms in the N2 molecule is proposed that has the form: v(4) = 4E, (4)* - ()'] 12 a. Find the position of the potential minimum and its value there, in terms of o and Eo, respectively. What do these parameters represent physically about the molecule? b. Draw a hand sketch of V(r) showing rmin, V(rmin) and where V crosses the r axis. c. If the atom is disturbed from its equilibrium by a small amount, show that the 7.56. frequency of oscillation is w = d. For molecular nitrogen, the bond length is 1.1 x 10-1°m, the bond (binding) energy is 9.79 eV (15.66 x 10-19 J), the mass is 14 amu = 23.38 x 10-27 kg. In the spectroscopy laboratory, this vibration is measured to be 8.8 x 1013 Hz. Is this a good model for the interatomic potential? (Recall o = 2n times frequency in Hz) where m is the mass of a nitrogen atom.
- J: Choose an answer for the following items, The bonding among atoms in NaCl crystalline structure is i. ( (A) ionic. (B) metallic. (C) covalent. (D) Van der Waals. ii. For a BJT with VBg (0on) = 0.7 V and Vce (sat) = 0.3 V, the operation mode if Vgg = 1 V and Ver = 1 V is (A) cut off. (B) linear. (C) saturated. (D) reverse active. iii. (! or a step potential function at x = 0, the probability that a particle exists in the region x > 0 is (A) zero. (B) I. (C) larger than zero. (D) larger then 1. iv. potenual barrier. (A) lower than --., The forward applied bias voltage on the pn junction cannot be .. the built-in (B) greater than (C) equal to (D) twire v. ( -, If the lattice scattering is 3 cm /(V.S) and the ionized scattering is 4 cm /(V.S), then the total scattering is (A) 1.71 cm?/(V.S). (B) 7 cm/(V.S). (C) I cm/(V.S). (D) 0.58 cm/(V.S). ) The probability that an electron exists at the Fermi energy level is vi. (A) U.7. (В) 1. (C) zero. (D) 0.5. vii. The ratio of the effective…- Find f if Vf = 4xyi + (2x² + 6y). f =Toot Sgn Commont +ik L 6, %3D 7. Prove (6):