Q1: A particular intrinsic semiconductor has a bandgap energy of 1.32 eV and has a resistivity of 60 2.cm at T = 300 K. Neglecting the change in mobility with temperature, determine the resistivity of the semiconductor at T 330 K.
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- Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.A20. An intrinsic silicon semiconductor is uniformly doped with acceptors to a level of 2x1017 cm-³. At room temperature, the electron concentration in this semiconductor is found to be 5x10² cm-3. What is the intrinsic carrier concentration of this semiconductor at room temperature and describe qualitatively how would the electron concentration change if the temperature increased slightly?Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…
- Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet m2 and 0.18 V. Sec m2 the mobility of electron and hole are 0.38 respectively. V. Sec Find the conductivity of pure Ge semiconductor.Question 2: а. Find the conductivity of an intrinsic semiconductor which have the following values: µe = (0 + 0.25) m²/V.s; µp = (0+ 0.035) m²/V.s; n¡ = (0 + 1.55) × 10*m³.. Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close to
- Q2: calculate the diffusion current density for a given semiconductor. Consider silicon at T=300k. Assume the electron concentration varies linearly from n=10 '² cm³ to n=10 16cm³ over the distance from x=0 to 3 µm assume Dn=35 cm²/secThe plot of the E field with respect to x in a metal semiconductor junction at 300K is shown in the figure. The semiconductor is Si and E(0)=-2x10* V/cm and xo-0.2x10 cm. What is the semiconductor type and built in potential value. レEo) O a. n type 200 mV O b. n type 800 mv Oc p type 400 mV Od. p type 200 mV O e. n type 400 mV Of. p type 800 mvA semiconductor Hall probe has a Hall coefficient (RH) of -3.75 x 105 m³/C in the temperature range of 130 K and 350 K. Its electrical conductivity is 150 (2.m)-¹. A. Deduce, with explanation, the type of carriers in the semiconductor B. Calculate the density and mobility of the charge carriers C. Give 2 examples of Hall probe application and 2 material fabrication methods for Hall effect proves.
- Q2 * Q 2: Semiconductor have the energy gab is lev the electrons density at 300k is 1020m³and the holes density is 10"m³. Find. A- What is the type of semiconductor? B- Carrier charge density C– Donor atoms density D- The position of fermi levelAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.A docs.google.com/forms/d/e. Marks 8 The temperature term isn't a part of the .total current density in a semiconductor True False The random motion of holes and free electrons due to thermal agitation is called .drift True False Under the equilibrium conditions, the number of holes which are thermally generated is equal to the holes lost by .recombination True False II >