Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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- Consider a gallium arsenide pn junction at T = 300 K with doping concentrations of Na = 5 X 10¹5 cm-³ and Nd = 6 X 10¹6 cm ³. Calculate the built-in potential barrier. A) Vbi = : 0.342 eV B) Vbi = 1.191 eV C) Vbi = : 1.157 eV D) Vbi = 0.723 eV E) Vbi = 0.689 eV F) Vbi = 0.307 eVarrow_forwardConsider the diode circuit shown in Fig. Q6. Assume VDO = 0.7 V and the diode breakdown voltage is at 10 V. V₁ R₁ VDD KISKI D₁ W+V₂ D₂ Fig. Q6 Supposed R is 10 k, VDD is 1 V, and V is now 20 V. Assume Di is forward biased and D2 is reversed biased. Determine V₂ and thus IRI. Explain why the diode D2 is not operating in the breakdown region.arrow_forwardConsider an asymmetric p-n junction which has a heavily-doped n-type side relative the p-type side. ND >> NA. Assume that the p and n-type sides are based from the same material. Sketch the following graphs, Q(x), E(x), V(x) and energy band diagram, for the following conditions: with no bias with a forward bias Varrow_forward
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