Q :- Find the mobilities, and resistivities of silicon samples at 300 K, for each of the following impurity concentrations: (a) 5 x 1015 boron atoms/cm3; (b) 2 x 1016 boron atoms/cm³ and 1.5 x 1016 arsenic atoms/cm³.

Grüneisen parameter for silicon The silicon crystal (diamond structure) has the following properties at 500 K. The lattice parameter (a) = 0.5440 nm, thermal expansion coefficient (a) = 3.6x106 K-', and the bulk modulus is about the same as that at room temperature (K = 99 GPa). The Debye temperature of Si is 625 K. At room temperature (300 K) its density is 2.33 g cm³, and its lattice constant is 0.5430 nm. Calculate the Grüneisen parameter at 500 K and compare with its value at room temperature in Table 1. Is 3 constant?

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