Problem 6 (20 points) (Chap 3) (Learning objective: MOSFET DC circuit analysis) For the transistor in the circuit in Figure P3.35, the parameters are VTN = 0.4 V, k = 120 μA/V², and W/L = 25. Determine VGS, ID, and VDs. Sketch the load line and plot the Q-point. +5 V R1 = 14 ΚΩ R2 = 6 ΚΩ www RD= 1.2 ΚΩ Rs= 0.5 ΚΩ -5 V

An npn transistor has the CE input characteristics shown in Figure 3-19 (p. 115) and the CE output characteristics shown in Figure 3-20 (p. 115). (a) Find IB when VBE = 0.7 V and VCE = 20 V. (b) Find the beta of the transistor at VCE = 6.0 V and IB = 20uA (neglecting leakage). (c) Find bac for VCE = 6.0V and IB varying from 20 uA to 40 uA. (d) What is the approximate value of VCE,sat in Fig. 3-20?

The mode of operation for the D-MOSFET is Select one: a. the ohmic region only b. the enhancement mode only c. both the depletion and enhancement modes d. the depletion mode only

[2] What is threshold voltage for MOSFET? Derive the equation of Vt of MOSFET. V = Vto + Y V(2. Pp + |Vsbl) – /2. Pp %D

Analyse figure q3.1 to find D-MOSFET channnel type and drain current given that VGS = -5v

b) For the transistor small signal h-parameter equivalent circuit shown in figure Q3b write down equations for Vbe and Ic in terms of Ib and Vce. hie Ie Vbe hreVce (+ hfelb 1/hoe Vce Figure Q3b

the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region?

Design the following MOSFET circuit for it to operate in saturation mode with 0.5 mA drain current. Determine Rp and dc voltage VĎ. Assume V₁ = 2 V and K = 0.1 mA/V² for this MOSFET. 10 V RD -VD

D3

9. Figure P3.39 = (a) Design the circuit in Figure P3.42 such that Ipo = 0.25 mA and VD = -2 V. The nominal transistor parameters are V₁p = -1.2 V, k 35 μA/V², and W/L = 15. Sketch the load line and plot the Q-point. (b) Determine the maximum and minimum Q-point values if the tolerance of the k', parameter is ±5 percent. +5 V Rs Figure P3.42 Rp -5 V OVD