Problem 1: PN Junction carriers densities Consider a PN junction with NA = 10^19 cm-3 and ND = 10^16 cm-3. (a) Assume V = 1.8V(Reverse bias) • What - are the minority carrier densities at the ideal depletion region. • edges? What are the excess minority carrier densities? • What are the majority carrier densities?

Consider a germanium pn-junction at 450 K with its n-region is doped with impurity concentration of 2.5 × 1017 cm-3. The built-in potential barrier of the pn-junetion is 0.675 V. Determine the required p-region doping concentration. Given the coefficient of Ge material, bandgap energy and Boltzmann constant is 1.66 × 1015 cm-³K-3/2. 0.66 eV and 86 x 10-6 eV/K respectively. Assume that, Vr = kT /e.

Helli. I only need the last part. Plotting power vs voltage if used as a solar cell and give the definition of  fill factor. Tnx

10. Consider a step pn junction made of silicon. Carrier lifetimes are given as T, = 10-s and T, = 10 is. Assume long diode, i.e. long quasi-neutral regions. What must be the doping density ratio, NA/Np, in order to have 95% of the total current in the depletion region carried by electrons? Answers within 5% error will be considered correct. Enter answer here

Problem 2. A MOSFET structure with an n-type substrate (also called 'body') has pn-junction diodes between 1) the source and the body, and 2) the drain and the body. If the substrate was grounded, and a -1 V was placed on the source electrode, and a 2 V was placed on the drain electrode, what would be the regions of operation of both the source/body and drain/body pn-junction diodes?

12. Use this information to answer Question 12-16: A silicon pn junction (step junction) has doping densities of NA =1 × 10 cm³ on the p-side and Np = 2 x 101 cm 3 on the n-side. Carrier lifetimes are given as T, = 10 ®s and T, = 10-s. Assume long diode, i.e. long quasi-neutral regions. Calculate the built-in voltage in unit of V. Answers within 5% error will be considered correct. Enter answer here 13. Suppose now that a forward bias of 0.6 V is applied. Calculate the minority carrier concentration, n, at the edge of the depletion region on the p-side, a = -1p- Give your answer in unit of cm-3. Answers within 5% error will be considered correct. Enter answer here 14. Under a forward bias of 0.6 calculate the minority carrier concentration, Pn, at the edge of the depletion region on the n-side, a = In- Give your answer in unit of cm3. Answers within 5% error will be considered correct. Enter answer here 15. Under a forward bias of 0.6 V, calculate the current density, Jotai, in unit of…

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PROBLEM 6 Consider the two-dimensional representation of the semiconductor GaAs shown below: .. : Ga; As : Ga ; : As: Ga : As: : Ga : As : Ga : If Si atoms are inserted as dopants and exclusively replace Ga atoms in the lattice, will the Si-doped GaAs material be n-type or p-type? What if the Si atoms exclusively replace As atoms? Explain.

Which statement(s) is (are) true about a P-N junction: A. P-N junction consists of n-type and p-type semiconductor materials.B. Free electrons in n-type diffuse across junction to p-type.C. A depletion region formation happens due to electrons and holes moving away from each other due to the electric field.

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