P-types silicon sample is 0.2cm long and has a rectangular cross section 0.03cm² .The accepter concentration is 5x10^18 holes/cm³. The mobility is 100. A current of 10µA exists in the bar. Determine the electron and hole concentrations, the conductivity, current density,velocity of electrons, the voltage across the bar and reristance.ni=10^10.

1. For a silicon diode, calculate the current at 20C if the forward voltage is 1V and the reverse saturation current Is=0.1nA

Q1) a)Explain how doping a pure silicon crystal with donor impurity atoms makes more charge carriers available for conduction.b)Does the above doping result in a p-type or n-type semiconductor? Explain your answer.                                      c) When the diode is forward biased:i) What happens to the barrier potential?ii) What happens to the depletion region?iii) Indicate on your diagram the directions in which the holes and electrons move

Consider the diode circuit shown below. If in the given circuit, Vs is replaced by a 12V battery and diodes D1 & D2 are considered ideal, what is the potential Vout equal to?