o VCC 1.6K 130 4K 4K 2.5K D3 Input A \Q1 Q7 D4 Q3 Output Input В Q2 Q6 Q4 Q8 1KS A D2 1K Q5 O GND
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- V1 Si T1 120 Vrms 60 Hz R1 S2.5kO 4:5 Determine the following using 2nd approximation a) VDC b) IDC c) VLPK d) ILPK e) VLRMS f) ILRMSb) Use the ALU 74181 in the figure below and the tables (one is enough; second maybe, need to check the new kit) to implement : A + B, A – B, A. B. (MSB) (LSB) 10 (MSB) F3 F2 F1 FO S3 Cn+4 16 s2 20 U14 15 S1 14 so A3 A2 A1 AO B3 B2 B1 B0 M Cn 24 23 22 21 28 27 T26 25 (LSB) (MSB) (LSB)(MSB) (LSB) And given that under M = 1 the circuit performs the following arithmetic and logic functions according to Table 11.1. Input selection S3 Output M-H S2 SI Cn=L. F3 F2 F1 FO A 1 -A В -B A&B AxB 1 A'B 1 Ax(-B) (-A)xB (-A)x(-B) 1 1 ACTIVE HIGH DATA M-L: ARITHMETIC OPERATIONS SELECTION M-H LOGIC s3 s2 s1 so Ino carry) (with carry) F-A PLUS 1 F- LA + B) PLUS 1 F- (A + BI PLUS 1 FUNCTIONS L L F-A F-A+B F-AB F-A H FA+B F-A+T F- MINUS 1 12s COMPL) F-A PLUS AB F- IA + BI PLUS AB L L L L F-0 F-ZERO F- AB F-A PLUS AB PLUS 1 F- (A + BI PLUS AB PLUS 1 L L L H L F-AOB F- AB L L F-A MINUS B MINUS 1 F-A MINUS B F- AB MINUS 1 F- A F-A PLUS AB PLUS1 F-A PLUS B PLUS 1 F- IA + B PLUS AB PLUS 1 L H L F-A PLUS AB…25mA!! With the help of VBB source, adjust the IC current to 25mA by increasing the IB current. To this current Measure the corresponding VCE voltage. Measured IC, VCE mark the intersection point of the values on the graph as the measured point Q on the graph.
- A. Determine V1 without C B. Determine V1 and VR with C C. From aB Determine V2, IL, PD D. From B determine the efficiency of the regulator (OUR SUBJECT IS INDUSTRIAL ELECTRONIC)Using node analysis, determine the model equation for Vout in terms of Vpot. Using the model equation, calculate the Vout for each value of Vpot. wwww R9 V3 10K Vpot 9Vdc R8 U2 ww 1k Vout SET = 0.5 OUT %3D OPAMP R7 Rô 10k 1kProblem 4 a) PEFF R₁ AAA b) Vs 5 V wwwwww R₁ R₂3 Vout 3.3 V Voltage generated by pins of Arduino microcontroller board is 5V. Voltages that can be applied to Raspberry Pi microcontroller boards cannot exceed 3.3 V, otherwise Raspberry Pi board will be permanently damaged. The so-called voltage level shifting is required. One of the ways how this can be achieved is by using the voltage divider circuit as shown in a), and schematically represented in b). Design this voltage divider circuit. Hint: in the voltage divider formula resistance of one of resistors can be chosen arbitrarily, so the other resistor value can be computed. In order not to exceed power ratings of resistors use resistor values not lower than 1 KQ.
- 3. Graphical Representation of the signal 1) Write the type of the voltage from simulation results: 2) Write the value of the voltage from simulation result: L....... -2 DDU 12ns SónG Trace Color Trace Name X Values CURSOR 1,2 V(R1:1,0) Y1 Y2 Y1 - Y2 5.0373m 0.000 5.0373m 249.983 0.000 249.983 Y1(Cursor1) - Y2(Cursor2) Y1-Y1(Cursor1) Y2 - Y2(Cursor2) Max Y Min Y Avg Y 249.983 0.000 0.000 249.983 0.000 124.991The characteristic of the UJT exhibits the following values: n = 0.575, RB1 = 10 k-ohms, Vv = 1.3 V, Iv =20mA, Ip=15UA. 125V B2 B, Determine the following: a. Determine the R82 (in kilo-ohms) of the UJT b. Determine the maximum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT c. Determine the minimum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT1. SP=F002H; after PUSH BX, what is the value of SP?
- The platinum RTD has been connected to the wheatstone bridge circuit represented by R3 with Vin = 5V, R1=R2=R4 = 100 ohms. Find the temperature where the RTD is subjected if voltage reading is 0.25 volts. Vin Select one: R₂ a. 39.23 °C b. 42.47 °C c. 48.73 °C d. 51.67 °C O f. e. 57.34 °C 62.76 °C g. 68.45 °C h. 74.28 °CQ1. find beta ? Q2. Find S ? Q3. Find S' ? Q4. Find S'' , using T1 as the temperature at which the parameter values are specified and beta( T2 ) as 20% more than beta( T1 )? Q5. Determine the net change in IC if a change in operating conditions results in Ico increasing from 0.3 micro A to 10 micro A, VBE drops from 0.7 V to 0.6 V, and beta increases 20%.1:EV * Asiacell Illı. Exercise_971Ob0ea2419c5ec80ad189723... Exercise Si E, c Si E20 o Vo R{1 kn E 10 V Design the circuit shown below using MULTISIM, the measure (current & voltage) on the resistor two times first when (El = 3v & E2 = 10v) and second when (El = 15V & E2 = 2v), analysis the circuit theoretically and compare between practical and theoretical results.