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O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x1016 cm 3 and Na = 1x1016 -3 cm and (b) additional 6x106 cm 3 of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 3. Effective density of valance band =1.04 x 10 19, cm *. T= 300 K, cm Boltzmann constant = 1.38x 1023 Kg s K'.

O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x1016 cm 3 and Na = 1x1016 -3 cm and (b) additional 6x106 cm 3 of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 3. Effective density of valance band =1.04 x 10 19, cm *. T= 300 K, cm Boltzmann constant = 1.38x 1023 Kg s K'.

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O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x1016 cm 3 and Na = 1x106 cm and (b) additional 6x1016 cm 3 of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 cm *. Effective density of valance band =1.04 x 10 19 cm . T= 300 K, Boltzmann constant = 1.38x 1023 Kg s K.
Transcribed Image Text:O 1) What are electron, hole, intrinsic carrier concentration, and energy band gap in Si with (a) Nd = 4x1016 cm 3 and Na = 1x106 cm and (b) additional 6x1016 cm 3 of Nd? Note: use Effective density of conduction band = 2.8 x 10 19 cm *. Effective density of valance band =1.04 x 10 19 cm . T= 300 K, Boltzmann constant = 1.38x 1023 Kg s K.
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