May you then just direct me towards the proper equations? Consider a silicon p+-n step junction (or abrupt junction) at room temperature. Note that this is a one-sided step junction. If the doping concentrations are NA = 10^17 cm-3 and ND=10^14cm-3, what is the depletion width (also known as space charge width)? Also, find the maximum electric field (Em). Then derive the expression for the electric field E(x), and the potential field V(x). For this start with Poisson’s equation and solve for E(x) using integration. Do not use limits of integration. To find the constant of integration, use boundary conditions such as "E=Em at x=0". Once you get expressions for E(x), you can find V(x). Use boundary conditions, “at x=-xp, V(x)=0, and at x=xn, V(x)=Vbi". Plot E(x) vs. x and V(x) vs. x within the depletion region

May you then just direct me towards the proper equations? Consider a silicon p+-n step junction (or abrupt junction) at room temperature. Note that this is a one-sided step junction. If the doping concentrations are NA = 10^17 cm-3 and ND=10^14cm-3, what is the depletion width (also known as space charge width)? Also, find the maximum electric field (Em). Then derive the expression for the electric field E(x), and the potential field V(x). For this start with Poisson’s equation and solve for E(x) using integration. Do not use limits of integration. To find the constant of integration, use boundary conditions such as "E=Em at x=0". Once you get expressions for E(x), you can find V(x). Use boundary conditions, “at x=-xp, V(x)=0, and at x=xn, V(x)=Vbi". Plot E(x) vs. x and V(x) vs. x within the depletion region