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JA 4 cm long piece of Si with a cross-sectional area of 0.01 cm2 is doped with donors at 1016/cm?, and has a resistance of 8 ohms. Calculate the electron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10-1" C; ở = qnµ; R= pL/A; v= µƐ)

JA 4 cm long piece of Si with a cross-sectional area of 0.01 cm2 is doped with donors at 1016/cm?, and has a resistance of 8 ohms. Calculate the electron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10-1" C; ở = qnµ; R= pL/A; v= µƐ)

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A 4 cm long piece of Si with a cross-sectional area of 0.01 cm² is doped with donors at 1016/cm?, and has a resistance of 8 ohms. Calculate the electron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10-lº C; o = qnµ; R= pL/A; v= uƐ) !!
Transcribed Image Text:A 4 cm long piece of Si with a cross-sectional area of 0.01 cm² is doped with donors at 1016/cm?, and has a resistance of 8 ohms. Calculate the electron drift velocity (cm/s), if we apply a voltage of 80 V across the Si piece. (q = 1.6x10-lº C; o = qnµ; R= pL/A; v= uƐ) !!
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