Inen a pure semiconductor doped With pentavalent impurity, then the number densities of the electrons and the holes respectively are (A)increased, increased (B)increased, unchanged (C)increased, decreased (D)decreased, decreased
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- At what temperature, in terms of Tc, is the critical field of a superconductor one-half its value at T = 0 K?In a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cmIn the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…
- Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The electron concentration ?
- The relation between the number of free electrons (n) in a semiconductor and temperature (T) is given by: Onx T nat πατ112 nx T3/2The electron number density in a semiconductor varies from 1020 m³ to 10¹2 m³ linearly over a distance of 4 µm. Determine the electron diffusion current and electric field at the midpoint if no current flows, He = 0.135 m²V-¹s¹ and T = 300 K.Silicon atoms with a concentration of 7x 1010 cm are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018 cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The intrinsic concentration?
- A sample of a semiconductor (A) is measured at room temperature The Hall coefficient of (A) is 4 x 10^-(4) m^3 coloumb^(-1) at room temperature. At room temperature, what is the carrier concentration in sample A?The electron and hole diffusion coefficients in silicon are D, 35 cm²/s %3D and D,=12.5 cm2/s, respectively. Calculate the electron and hole diffusion current densities (a) if an electron concentration varies linearly fromn= 105 cm-3 to n = 1016 cm-3 over the distance from x =0 to x = 2.5 um and (b) if a hole con- centration varies linearly from p = 1014 cm-3 to p 5 x 1015 cm-3 over the dis- tance from x =0 to x 4.0 µm. %3D %3D %3D write the final answer below a) hole current density: electron current density b) hole current density: electron current densityA transistor with a height of 0.4 cm and a diameter of 0.6 cm is mounted on a circuit board. The transistor is cooled by air flowing over it with an average heat transfer coefficient of 30 W/m2·K. If the air temperature is 55°C and the transistor case temperature is not to exceed 70°C, determine the amount of power this transistor can dissipate safely. Disregard any heat transfer from the transistor base.