ind the mobilities, and resistivities of silicon samples at 300 för éäch öf the following impurity concentrations: (a) 5 x 1015 boron atoms/cm3; (b) 2 x 1016 boron atoms/cm³ and 1.5 x 1016 arsenic atoms/cm³.
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- How many valence electrons are generally contained in materials used for insulators?Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3Consider an n-type silicon for which the dopant concentration ND = 1020/cm³. Find the electron and hole concentrations at T= 350 K. 20/cm3 102/cm3 electron = 10 & holes= 17.22 x electron 17.25 x 102/cm3 & holes= 12.25 x 104/cm³ electron 2.25 x 104/cm3 & holes= 1016/cm 3 electron 1020/cm3 & holes= 102/cm3
- Consider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?Considering the following expressions for pure germenium and pure silicon: 1. direct band gap semiconductors 2. indirect band gap semiconductors 3. degenerate semiconductors from these expressions: please choose one: a) 1 alone is true b) 2 alone is true c) 3 alone is true d) none of the aboveA silicon sample is doped with 5.0×1019 donor atoms/cm3 and 5.0 × 1019 acceptor atoms/cm3. (a) What is its resistivity? (b) Is this an insulator, conductor, or semiconductor? (c) Is this intrinsic material? Explain your answers.
- Calculate the built-in potential and depletion-region width for a silicon diode if NA is increased to 2×1018/cm3 on the p-type side and ND =1020/cm3 on the n-type side.Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? H, = 2505 nį = 1.5 x 1010cm-3 cm-2 and V.S (Ans. 2.25 x 103 cm-3, 0.252.cm).Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. O Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. O Si diodes have higher PIV and wider temperature ranges than Ge diodes. To increase the electrical conductivity of an intrinsic semiconductor, we need to add impurity increase the resistivity apply heat None of the them
- A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AIn a Si diode, the junction area is 0.25 mm2 and the doping density of the n-type region is ND = 1017 / cm3. ; Additive density of p-type region NA = 1015 /cm3. ni = 1,5 1010 /cm3, q = 1,602 10-19 C, VT = 25mV, r = 12, o = 8,85 10-14 F/cm, μn =1350 cm2/Vs, μp = 480 cm2/Vs, τn = τp = 1 At room temperature, a. Find the densities of minority and majority carriers in both regions b. What is the potential wall height?Q7/ Silicon has a conductivity of 5 x 10- (N.m)- when pure. How many indium atoms/m3 are required so that the conductivity of 200 (.m)- could be achieved in silicon using indium as an impurity? m2 Given that the mobility of holes in silicon is 0.05 and of electrons is V. Sec m 0.13 V. Sec