In an n-type silicon sample, the donor concentration at 300 K is 5 x 1014/cm3 that corresponds to 1 impurity atom for 1018 silicon atoms. The electron and hole concentration in the sample will be: [Assume n₁ = 1.45 x 1010/cm³]

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In an n-type silicon sample, the donor concentration at 300 K is 5 x
1014/cm3 that corresponds to 1 impurity atom for 1018 silicon atoms.
The electron and hole concentration in the sample will be:
[Assume n₁ = 1.45 x 1010/cm³]
Transcribed Image Text:In an n-type silicon sample, the donor concentration at 300 K is 5 x 1014/cm3 that corresponds to 1 impurity atom for 1018 silicon atoms. The electron and hole concentration in the sample will be: [Assume n₁ = 1.45 x 1010/cm³]
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