If the resistor Rx is 2.5 k2, and we use the ideal diode model, what is the current in D₁ (labeled I) expressed in milliamps?

For the circuit in the figure, let V input = 8V, Ri = 12ohms, RL = 10ohms, and VZ = 3.3V. Determine the voltages and currents of the resistors and the current of the zener diode.

Q²: A diode room temperature (VT=25mV) Conducts 1.0mA when it's forwar voltage is 0.7v. what will be the current in milliamps if the forward voltage is 0.5V?

From the diode circuit shown below, If E=30 V and RL=802, determine the current supplied from the battery, the voltage across the load resistance, and the voltage across diode D2 if all the diodes are silicon with an internal resistance of 1 2. D . RL D4 D3 a. The Current supplied by battery is b. The Voltage across Load resistance RL is c. The Voltage across diode D2 is

Given the following circuit with VDD= 9.2 V, R=2.3 k2, then the current Iis: Use the CVD model for the diode, with VD = 0.65 V. I VDD a. 0.004000 A O b. 3.717391 A OC. 0 A d. 4.000000 A e. 0.003717 A R + VD -

Determine the negative resistance for the tunnel diode in the figure between ?T = 0.2 ? and ?T = 0.4

The circuit below has a variable voltage vin as its input. We are interested in Vout as a function of Vin. In other words, if we vary the value of the voltage source vin, what will be the effect on the voltage Vout? The steps below will help you to investigate this question, and your answers will form the basis for a new design. Assume that the diode can be sufficiently modelled as simple diode with forward voltage of 0.7 V (you do not need Shockley's equation). Vin 100Ω M Vf = 0.7 V 2 V V out

Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?