How do I complete the table? X CLK CLK D1 D2 - N - D D1 0 D 0 D2 CK /D1 CK Q Q /D2 N

Consider the following R-2R ladder DAC. For a binary input 1011, the value of the output voltage is: Do D₁ +5.0 V +5.0 V R₂ 30 km2 25 km2 | R₁ R₂ R₂ R₂₁ > 50 kΩ Σ 50 ΕΩΣ 50 ΕΩΣ 50 ΕΩ R₂ R6 R₂ 3.43 V 3.125 V -3.43 V -0.937 V D₂ OV m 25 k D3 +5.0 V m 25 kn R,= 50 kQ2 Buffer Vout

Part C: 15 mins|( 5 pts each) Find the voltages across R1,R5, R6 and R7. CPE 037 - Fundamentals of Electric Circuits R4 70 2 ww R1 R5 100 2 125 Q Vs 96V ww R2 R7 225 Q R6 120 Q 500 2 ww R3 25 2 ww ww ww ww

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The current flowing in resistor R in the circuit shown in figure is I2- I1. See the Pic and Select one: a) True b) False

3 - Find the karnaugh maps corresponding to the device below. D1 D2 J1 01 J2 Q2 CLK CLK K1 Q1 K2 Q2 CLK J1 K1 0 1 O 10 Q1 Q1 J2 Q1 K2 Q1 1 1 1 a) O Q2 O 1 1 1 dd 1 1 d. Q2 Q2 Q2 1 1 d 1 1 1 J1 Q1 K1 Q1 12 Q1 K2 Q1 | 1 1 1 1 b) O 1 d 1 d Q2 1 Q2 Q2 P d Q2 1 1 1 d 1 1 d J1 Q1 K1 Q1 J2 Q1 K2 Q1 O 1 0 1 1 d 1 1 c) 1 Q2 Q2 Q2 Q2 1 d1 1 1 J1 Q1 K1 Q1 J2 Q1 K2 Q1 1 1 O o 1 1 d d d) O 1 1 O 1 Q2 1 0 O 00 1 d d d. Q2 Q2 Q2 1 1 J2 O 1 0 1 J1 Q1 K1 Q1 Q1 K2 Q1 | 1 1 1 e) O 1 1 Q2 1 Q2 1 d 1 Q2 d Q2 1 d 1 J1 Q1 K1 Q1 J2 Q1 K2 Q1 1 1 1 1 f) O 1 P d 1 d 1 Q2 Q2 Q2 Q2 1 1d 1 1 d 1 1 P

Dopant density (cm-³) 1021 1020 1019 1018 1017 1016 10¹5 1014 1013 10¹2, 10-4 10-3 10-¹ 10⁰ 10¹ 10² 10³ 104 Resistivity (ohm-cm) FIGURE 2-8 Conversion between resistivity and dopant density of silicon at room temperature. (After [3].) N type 10-2 P type EXAMPLE 2-3 Temperature Dependence of Resistance a. What is the resistivity, p, of silicon doped with 10¹7cm-3 of arsenic? b. What is the resistance, R, of a piece of this silicon material 1 um long and 0.1 μm² in cross-sectional area? c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K? d. What As concentration should one choose if she wishes to minimize the change in (c)?