has a rectangular cross-section (1x 4 um). A CuTUlm produces a voltage drop of (100 mV) across the line. Determine the electron concentration given that the electron mobility is (500 cm2/V.Sec.).
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- Conduc-Thor-s. Thor has two square prism conductors that are made of the same ohmic material and with properties indicated below. Conductor Length Cross-Section Side Length Alpha Beta L/2 8/4 Suppose both conductors are subject to the same potential difference AV across their length while keeping their temperatures fixed. Which of the following is the correct relation between the electric currents, I, and Ig, through Aipha and Beta? O A. I = 81, %3D O B. 8I. = I3 Oc. Ia = 413 O D. 4la = I3Q6/ a- Find the conductivity and resistivity of intrinsic Ge at 300K. b- If n-type impurity is added to the extent of one atom per 10° germanium atoms, find the conductivity and resistivity. Assume the following data; n¡ = 2.5 x 1013 cm-3, Hn = 3800- cm2 V. Sec' cm2 and Number of germanium atoms/ cm3 Hp 1800: V. Sec' = 4.4 x 1022.Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(N.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3 , µn=1200 * .Cm2/V.sec & up=400Cm^2/V.sec
- Q:: A Si sample is doped with 107 cm3 As. What is the equilibrium hole concentration at 300 k? and where is Ep relative to E,? Take n = 1.5 x 1010 cm-. (Ans. 2.25 x 10'cm,0.407ev).Plz choose the correct answer with reason 6- The width of the depletion region isa. Directly proportional to the dopingb. inversely proportional to the dopingc. Independent of dopingd. None of the aboveWill quantitative fluorescence spectroscopy be as sensitive to path length differences in sample cells as quantitative UV-visible spectroscopy? Explain. What are some of the potential pitfalls of parts per billion analysis?
- Q. use determine the polari zibilty ekatoms clausius Mossotti equation to in the air molecules, where the number density of day relative oliplacement of nitrogen cur is 2:S04 x135 m?, Assume the result O for nitrogen atom and Compute the nucleus and electronic cloud at 6. tidd strength Em = 3x10 /mA Langmuir probe of area 3.2 x 10-5 m2 measures an ion saturation current of 0.042 mA in an argon plasma with an electron temperature of 3.5 eV. Calculate the plasma density at the sheath edge. Take the argon atomic mass as 40 u. Give your answer in SI unitsAssume the same lifetime and processes occur in a lasing material that has a threshold current density of 1000A/cm? with a carrier lifetime (for an uncontaminated material) of Ins. (Hint: look at rate equation for relationship between Im and t) c) If the material is contaminated with Au to a level of about 1018/cm', what is the new total carrier lifetime? d) What would the new threshold current density be?
- 6V ol +T;> T The output signal given above is taken from a circuit with the frequency of the input signal 100 Hz, the capacity of the capacitor used is 4µF, and the value of the ripple factor is 1.21. Answer the following questions using the ones given. The diodes used are silicon diodes, their operating voltages are 0.7 volts, and can be omitted because their resistance is very small. a) Write down the purpose of the circuit that will give the output signal above. b) Calculate the effective value of Ripple voltage V_rms for this circuitThe induced electron flow in Situation A would be ___.The induced electron flow in SItuation B would be ____.a isothermal plasma is confined between the planes x=+-a in a magnetic field B=Bo Z. Jensity distribution is A) Derive an expression for the electron diamagnetic drift velocity vpe as a function of x. B) Draw a diagram showing the density profile and the direction of vDe on both sides of midplane if B is out of the paper. C) Evaluate vp, at x=a/2 if B=0.5T, KT,=10ev and a=7cm.