Given the following data for the intrinsic semiconductor of InP: Eg = 1.3 eV, me = 0.07m, m₁ = 0.69m, μle = 4600 cm²/V-s, µ = 150 cm²/V-s; T = 300 K. Two samples of the InP is now doped as follows: Sample A: doped n-type with No 10¹0 cm-³ Sample B: doped p-type with NA = 5 x 100 cm-³ (a) Calculate the effective density of states in the valence and conduction bands and the intrinsic charge carrier concentration for undoped/pure InP. (b) Calculate the majority and minority charge carrier concentrations for (i) sample A and (ii) sample B. Calculate and illustrate where the Fermi-level is located in the energy band for (i) sample A and (ii) sample B. (c) (d) (e) (f) Calculate the total conductivity for (i) sample A and (ii) sample B. Now bring samples A and B together to form a pn-junction. Sketch the band diagram of the resultant pn-junction, indicating all the energy levels. Calculate the build-in voltage of the pn-junction.

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Given the following data for the intrinsic semiconductor of InP:
Eg = 1.3 eV, me = 0.07m, mh = 0.69m, He = 4600 cm²/V-s, μh = 150 cm²/V-s; T = 300 K.
Two samples of the InP is now doped as follows:
Sample A: doped n-type with No = 10¹⁰ cm-³
Sample B: doped p-type with NA = 5 x 10⁰ cm-³
(a)
Calculate the effective density of states in the valence and conduction bands and the
intrinsic charge carrier concentration for undoped/pure InP.
Calculate the majority and minority charge carrier concentrations for (i) sample A and (ii)
sample B.
Calculate and illustrate where the Fermi-level is located in the energy band for (i) sample
A and (ii) sample B.
(b)
(c)
(d)
(e)
(f)
Calculate the total conductivity for (i) sample A and (ii) sample B.
Now bring samples A and B together to form a pn-junction. Sketch the band diagram of
the resultant pn-junction, indicating all the energy levels.
Calculate the build-in voltage of the pn-junction.
Transcribed Image Text:Given the following data for the intrinsic semiconductor of InP: Eg = 1.3 eV, me = 0.07m, mh = 0.69m, He = 4600 cm²/V-s, μh = 150 cm²/V-s; T = 300 K. Two samples of the InP is now doped as follows: Sample A: doped n-type with No = 10¹⁰ cm-³ Sample B: doped p-type with NA = 5 x 10⁰ cm-³ (a) Calculate the effective density of states in the valence and conduction bands and the intrinsic charge carrier concentration for undoped/pure InP. Calculate the majority and minority charge carrier concentrations for (i) sample A and (ii) sample B. Calculate and illustrate where the Fermi-level is located in the energy band for (i) sample A and (ii) sample B. (b) (c) (d) (e) (f) Calculate the total conductivity for (i) sample A and (ii) sample B. Now bring samples A and B together to form a pn-junction. Sketch the band diagram of the resultant pn-junction, indicating all the energy levels. Calculate the build-in voltage of the pn-junction.
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