Given The Following BJT Amplifier Circuit Find: 1)Rth,Vth,VE 2) Rin, Rib, Ro 3)The slope of D.C.L.L= 4)When R1 is open VCE=

Please answer this question and show necessary steps to obtain the answer.

4) Consider the amplifier shown below with its corresponding small signal model. Using the provided small signal model, perform small signal analysis to determine expressions the you would need to determine Av(s). Do NOT solve for Av(s), just provide the expressions that you would need to determine Av(s). Show your work! Do NOT make any approximations. Vin Cf Vcc WWW R Vo CL Vin W R1 Cf + Vberπ ww R gm Vbe W ro Vo CL

True or False? For good amplifier design, transistors are biased in the knee part of the IV-Curves. The most fundamental parameter in characterizing the small-signal linear operation of a transistor is the transconductance gm. When a resistance is connected in series with the source (or emitter), the Hybrid-Pi model is the most convenient to use. Discrete-circuit amplifiers predominantly employ MOSFETs while IC amplifiers predominantly uses BJTs. The basic gain cell of IC amplifiers is the CS (CE) amplifier with a current-source load. The MOS current mirror has a current transfer ratio of (W/L)1/(W/L)2. The internal capacitances of the MOSFET and the BJT cause the amplifier gain to rise at high frequencies. The internal MOSFET capacitances that must be considered when evaluating the frequency performance are the gate capacitances and the junction capacitances. Channel modulation causes Id to increase in the saturation mode. When Vgs=Vt, the channel charge beneath the gate is inverted.