For the emitter bias network determine: (a) IB. (b) Ic (c) VCE- (d) Vc- (e) VE (f) VB. (g) VBC +20 V 2 kl2 430 ka 10 uF I0 uF A-50 1 k2 40 uF Emitter-stabilized bias circuit for Example 4.4.

A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.

2. We discussed in class how the channel capacitance can be modeled in different region of operations in MOSFETs. For your reference, the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region? Channel Capacitances Channel capacitance is a voltage dependent and non-linear capacitance S C P-sub Bulk Cutoff Region D Operation Region Cutoff Linear Saturation S P-sub Bulk C Linear Region CGBCH CoxWLeff 0 0 1 2 3 S P-sub Bulk Saturation Region CGSCH 0 сат CoxWL eff 1 2 CGDCH 0 CoxWLoft CoxWLoff eff D 0

Pls help ASAP. Pls show all work.

Pls help ASAP. Pls show all work.

Please solve.

4. For the circuit shown in Figure, determine IC and VCB. Assume the transistor to be of Germanium.

2) Using the electrical characteristics data provided for 2N7000G n-channel mosfet, determine the following: 5M i) the K value for the mosfet. ii) Sketch the Transfer characteristics show all your calculation steps clearly.

In a properly Biased NPN transistor most of the electrons from the emitter A. recombine with holes in the base, B. recombine in the emitter its self, C. pass through the base to the collector, D. are stopped by the junction barrier. In transistor, the relation among emitter current, base current and Collector Current is: A. Ic=IB+IE, B. Ig=IB+Ic, C. IE=Ic-IB, D. I=Ig-Ic. • Transistor is known as bipolar transistor because it has: A. Electrons, В. Holes, C. Electrons and holes, D. None of the above. In NPN or PNP transistor: A. Ic> IE, B. IE >Ic, C. IE = Ic, D. None of the above. The base of an NPN transistor is: A. Heavily doped, B. Lightly doped, C. Medium Doped, D. Doped by pentavalent material. In a transistor the value of a (B) is 100, the value of (a) is: A. 0.01, В. О.1, C. 0.99, D.1.

Questions One Consider a uniformly doped silicon bipolar transistor at T=300K with a base doping of N, =5 x 10" cm' and collector doping of 2 x 10 cm. Assume the metallurgical base width is 70um. Calculate the change in neutral base width at the C-B voltage of 2V. (Hint Calculate depletion width to the base side at V = 2V and subtract for original length)