For an air/SiO2/GaAs/SiO2/air device structure, the light is emitted from GaAs layer uniformly in all directions (the indices of refraction of GaAs and SiO2 are 3.63 and 1.46 respectively). Assuming no re-absorption to the emitted photons, (1) please calculate the %age of light that get trapped in the GaAs layer due to TIR, (2) calculate the %age of light that get trapped in the SiO2/GaAs/SiO2 structure due to TIR
For an air/SiO2/GaAs/SiO2/air device structure, the light is emitted from GaAs layer uniformly in all directions (the indices of refraction of GaAs and SiO2 are 3.63 and 1.46 respectively). Assuming no re-absorption to the emitted photons, (1) please calculate the %age of light that get trapped in the GaAs layer due to TIR, (2) calculate the %age of light that get trapped in the SiO2/GaAs/SiO2 structure due to TIR
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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For an air/SiO2/GaAs/SiO2/air device structure, the light is emitted from GaAs layer uniformly in all directions (the indices of refraction of GaAs and SiO2 are 3.63 and 1.46 respectively). Assuming no re-absorption to the emitted photons, (1) please calculate the %age of light that get trapped in the GaAs layer due to TIR, (2) calculate the %age of light that get trapped in the SiO2/GaAs/SiO2 structure due to TIR
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