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For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-1⁹, n₁ = 1.5x101⁰ carriers/cm³ 1. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500 µm thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 2. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3x1015 cm-³ K-3/2, Eg = 1.12, k = 8.62x10-5 eV/K 3. Boron gas is used to dope the silicon wafer to a dopant concentration of 1016/cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?

For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-1⁹, n₁ = 1.5x101⁰ carriers/cm³ 1. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500 µm thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 2. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3x1015 cm-³ K-3/2, Eg = 1.12, k = 8.62x10-5 eV/K 3. Boron gas is used to dope the silicon wafer to a dopant concentration of 1016/cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
Problem 1.1P
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For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-1⁹, n₁ = 1.5x101⁰ carriers/cm³ 1. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500 µm thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 2. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3x1015 cm-³ K-3/2, Eg = 1.12, k = 8.62x10-5 eV/K 3. Boron gas is used to dope the silicon wafer to a dopant concentration of 1016/cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
Transcribed Image Text:For all questions, assume T = 300K unless specified, VT = kT/q = 0.026V, q = 1.6x10-1⁹, n₁ = 1.5x101⁰ carriers/cm³ 1. A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500 µm thick (or thin) wafers. Give the number of free electrons and holes of each wafer at equilibrium. 2. After cutting, the cells are put into a diffusion furnace and heated to 850°C. At this condition (assuming equilibrium is reached), what is the new number of free electrons and holes of each wafer? B = 7.3x1015 cm-³ K-3/2, Eg = 1.12, k = 8.62x10-5 eV/K 3. Boron gas is used to dope the silicon wafer to a dopant concentration of 1016/cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
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