For a particular depletion mode NMOS device, Vt = -2V, kn W/L = 200 µA/V2 and λ = 0.02V-1. For VDS = 2V. Find the drain current that flows

VLSI Wafer Yield  Given the defect density D= and chip area A, use Murphy's yield model to estimate the chip yield. Calculate for D=0.5 defects/cm2 D=0.5 defects/cm2 and A=1.5 cm2 A=1.5 cm2.

A silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10° cm, 10" cm, and 106 cm in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature. (3) Determine the base current density in the transistor if the base emitter voltage VBs is forward biased with 0.5 V. Assume the base and emitter lengths are shorter than the diffusion length. (4) Explain why current gain is higher in npn transistors than in pnp transistors. (5) Sketch forward active lc vs. VE characteristics of the npn transistor as Vae increases with equal increments of voltage (e.g. 400 mv, 450 mv, 500 mv and 550 mV). You do not need to calculate values for collector current.

Hey, can you please make sure this question is solved correctly and step by step solution to the way to approach and how it's done please. I want to learn how to do this type of problem. Figure 2 shows a more realistic BJT cross-section.Collector virtually surrounds entire emitter region. This makes it difficult forelectrons injected into base to escape collection. Device is not symmetrical.Can emitter and collector be interchanged?Is this BJT a uni-directional device?Explain.