Figure P2.47 gives the electron and hole concentra- tions in a 2-um-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffu- sion components of the hole and electron current densities at x = 1.0 µm? Assume that the elec- tron and hole mobilities are 350 and 150 cm²/V-s, respectively. 1.01 X 1018. 1016 x=0 E p(x) n(x) 1018 104 x=2 µm

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100|-
1
100%
O
1.01 X 1018.
|2|
1016
Normal text
Figure P2.47 gives the electron and hole concentra-
tions in a 2-µm-wide region of silicon. In addition,
there is a constant electric field of 25 V/cm present
in the sample. What is the total current density at
x = 0? What are the individual drift and diffu-
sion components of the hole and electron current
densities at x = 1.0 μm? Assume that the elec-
tron and hole mobilities are 350 and 150 cm²/V. s,
respectively.
x=0
E
Arial
n(x)
p(x)
11
1018
104
x=2 µm
+ BIUA
3 | 4 | 5 | 6 | 7 |
88%
→
55°F
o
(8)
0
@
ID
im
63
>
=S ■
n
9:37 AM
10/17/2022
X
:
1
Transcribed Image Text:Untitled document - Google Docs X ← → с https://docs.google.com/document/d/1GwQ1Wwe2FWPJw6pxcqiPqsA3PHjVT-wR89GVTq_N1dY/edit Search the menus (Alt+/) + Type here to search 100|- 1 100% O 1.01 X 1018. |2| 1016 Normal text Figure P2.47 gives the electron and hole concentra- tions in a 2-µm-wide region of silicon. In addition, there is a constant electric field of 25 V/cm present in the sample. What is the total current density at x = 0? What are the individual drift and diffu- sion components of the hole and electron current densities at x = 1.0 μm? Assume that the elec- tron and hole mobilities are 350 and 150 cm²/V. s, respectively. x=0 E Arial n(x) p(x) 11 1018 104 x=2 µm + BIUA 3 | 4 | 5 | 6 | 7 | 88% → 55°F o (8) 0 @ ID im 63 > =S ■ n 9:37 AM 10/17/2022 X : 1
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