Figure 1 shows a layout implemented in the 45 nm CMOS process described in the information sheet (n+implant and p+implant layers not shown). Process parameters, device equations, layer key and design rules can be found on the information sheet.

Figure 1 shows a layout implemented in the 45 nm CMOS process described in the information sheet (n+implant and p+implant layers not shown). Process parameters, device equations, layer key and design rules can be found on the information sheet.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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(E) For each of the three items, explain what the possible consequences of not doing the item
before tape-out would likely be.

Figure 1 shows a layout implemented in the 45 nm CMOS process described in the information
sheet (n+implant and p+implant layers not shown). Process parameters, device equations, layer
key and design rules can be found on the information sheet.
P-WELL
VTG
VTL
X
A
B
++++++++++
Onm 100 200
Figure 1: Circuit layout. Drawn to scale.

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