Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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1- explain the component and how BJT (npn) transistor works and mention the types of current in it and its direction with sketch .
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- QUESTION 4 a) Discuss four advantages of field effect transistor (FET) over bipolar junction transistor (BJT). b) With the aid of suitable diagrams, explain the primary difference between n-channel depletion and enhancement type metal oxide semiconductor field effect transistors (MOSFETS).arrow_forwardGiven shows the mutual characteristic for a junction gate field effect transistor. When the gate-source voltage is -2.5V, determine the value of drain current, the dynamic value of forward transconductance. -2.5V 2.5V - 12mA 5 mA -5.0-4.5 -4.0 -3.5 -3.0-2.5 -2.0 -1.5 -1.0 -0.5 Gate-source voltage, VGs (V) 0 20 18 16 14 12 10 00 6 4 2 0 Drain current, (mA)arrow_forwardWhat is the approximate range for the base-emitter Zener voltage in a BJT and why is the range not smaller nor larger?arrow_forward
- Task 3 a. Explain the operating principle of a BJT. b. For the given circuit below, the collector to emitter voltage of the BJT is 5.2V. Determine the current gain (B) of the transistor. BTEC 100 kn +12V 1kQ I Loughborough COLLEGE-arrow_forwardState and explain the relation of drain current versus gate to source voltage for an MOSFET.arrow_forward
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