Vi VGSQ + - VDD D + VGS RD + VDS vo Figure 4.1 NMOS common- source circuit with time- varying signal source in series with gate dc source EXERCISE PROBLEM Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 ks. The transistor parameters are VTN = 0.4 V, k = 100 μA/V², W/L = 50, and λ= 0.025 V1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small- signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGsQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDs (sat); (b) gm 1.58 mA/V, ro = 160 ks2; (c) -14.9)

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
Question

Please explain this with all the steps 

Vi
VGSQ
+
-
VDD
D
+
VGS
RD
+
VDS
vo
Figure 4.1 NMOS common-
source circuit with time-
varying signal source in
series with gate dc source
Transcribed Image Text:Vi VGSQ + - VDD D + VGS RD + VDS vo Figure 4.1 NMOS common- source circuit with time- varying signal source in series with gate dc source
EXERCISE PROBLEM
Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 ks. The
transistor parameters are VTN = 0.4 V, k = 100 μA/V², W/L = 50, and
λ= 0.025 V1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify
that the transistor is biased in the saturation region. (b) Determine the small-
signal parameters gm and ro. (c) Determine the small-signal voltage gain.
(Ans. (a) VGsQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDs (sat);
(b) gm 1.58 mA/V, ro = 160 ks2; (c) -14.9)
Transcribed Image Text:EXERCISE PROBLEM Ex 4.2: For the circuit shown in Figure 4.1, VDD = 3.3 V and RD = 10 ks. The transistor parameters are VTN = 0.4 V, k = 100 μA/V², W/L = 50, and λ= 0.025 V1. Assume the transistor is biased such that IDQ = 0.25 mA. (a) Verify that the transistor is biased in the saturation region. (b) Determine the small- signal parameters gm and ro. (c) Determine the small-signal voltage gain. (Ans. (a) VGsQ = 0.716 V and VDSQ = 0.8 V so that VDS > VDs (sat); (b) gm 1.58 mA/V, ro = 160 ks2; (c) -14.9)
Expert Solution
steps

Step by step

Solved in 2 steps with 6 images

Blurred answer
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,