EXERCISE PROBLEM Ex 3.1: An NMOS transistor with VTN = 1 V has a drain current ip = 0.8 mA when VGS 3V and VDS = 4.5 V. Calculate the drain current when: (a) UGS = 2 V, VDS = 4.5 V; and (b) UGS = 3 V, VDS = 1 V. (Ans. (a) 0.2 mA (b) 0.6 mA)

Sketch the transfer and drain characteristics of an n - channel depletion type MOSFET with IDSS = 12 mA and VP = –8 V for a range of VGS = –VP to VGS = 1V. Show the details of your work.

a. Design a stable bias circuit for a silicon npn BJT such that VCEQ = 4V and Ico = 2 ma. Assume Vcc = 12 V and Bmin = 80. %3D Use standard resistor values as much as possible. Do not forget to draw the circuit diagram of your design. b. Derive the load line equation; plot the load line and indicate the Q-point.

Example 13 The maximum drain current for the 2N4351 n-channel enhancement-type MOSFET is 30 mA. Determine VGs at this current level if k = 0.06 × 10-3 A/V² and VȚ is the maxi- mum value.