Ex1 Salt (NacI) absorbs very strongly at infrared wavelengths in the re- strahlen band. The complex dielectric constant at 60um is given by E, =25+133. Calculate the absorption coefficient and reflectivity at this wavelength.

Q: M [Al3+] = 0.2 in the middle of the solution at 298 K, 8 = 0.5 mm, D(AI3+) = 5x10-8cm2/s  Whate the…

A: Here is the explaination for the given question To calculate the limited current intensity for…

Q: Say that the surface of a star has a temperature of 6000 K and an electron density of n = 2.6 x 1019…

A: Find step to step solution in image attached below. Answer = 1.6565 × 10^-4

Q: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration…

A: Given:- intrinsic carrier concentration ( ni ) = 1 x 1016 electron/m3 The doping concentration (…

Q: The dispersion relation of the graphene conduction band is sketched in the figure below. What is the…

A: In band theory of solid the E versus K diagram is called energy band diagram. The energy is…

Q: The maximum wavelength of light that a certain silicon photocell can detect is 1.11 mm. (a) What is…

A: The expression for the energy difference between the top valance band and bottom of conduction band…

Q: Diodes are frequently used as temperature sensors. An experiment is set up in the lab and 20% of the…

A: diode conduction formula is I=I0eqVkT-1

Q: Calculate the electron flux in (Am-2) emitted by a molybdenum metal at a temperature of 2500 K.…

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Q: H.w// The energy rate is given at T> 0K with the following: (e) = ef(e)g(e)de And compensate for…

A: Condensed matter physics is the field of physics concerned with studying the physics of various…

Q: A germanium diode is used to detect radiation with energy of 1.6 MeV. To do so, the anode (positive…

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Q: Determine the thermal equilibrium electron and hole concentrations for a given doping concentration.…

A: Given,  T = 300 K Nd = 5*1013 cm-3  Na = 0 Ni = 2.4 * 1013 cm-3

Q: Q3: In a P-type germanium, n₁ = 2.1 x 10¹ m density of boran 4.5 × 1023 atoms /m³. The electron and…

A: Given

Q: It has a high atomic number to improve the efficiency of bremsstrahlung x-ray production .A Tungsten…

A: Bremsstrahlung can be produced with any charged particles and any target. For example, at research…

Q: The forbidden energy bandgap of AIP is 2.43 eV. Determine the wavelength (in nm) of an incident…

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Q: 1) Determine the absorption coefficient u (7.2 keV) for Fe metal? Pr= 7.86 g/cm O re (7.2kev) =393…

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Q: c. What is the built in potential for the junction Vi d. Calculate the maximum value of electric…

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Q: The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per…

A: Given that nI = 1.5 × 1016m–3 Following values are given in the question: Number of silicon atoms, N…

Q: What is the identity of this metal X where the lowest energy for the fluorescence ray emitted is…

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Q: To obtain the value of an unknown electrical charge, a group performed an experiment. From the graph…

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Q: Calculate the drift current density in a gallium arsenide sample at T = 300K, with doping…

A: We use the formulae: p=n2i/n J=eE(nμn+pμp)

Q: Lead has Tc = 7.19 K and Hc = 63 901 A m-1. At what temperature does lead become superconducting in…

A: The crtical magnetic field of a super conductor is the value of magnetic field applied above which…

Q: The GaAs sample at T= 300 K with doping concentrations of [N₂ =0 and N= 10¹6 cm-³]. Assume complete…

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Q: Using linear interpolation method, identify the indium content of in,Ga 1 As which has a bandgap…

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Q: Give several p-type and n-type dopant for GaAs and ZnSe. What kind of dopant is Si in InP

A: In this question we have to give examples of p type and n type dopants. Please give positive…

Q: A bar of n-type germanium 10 mmx1mmx1mm. The electron density in the bar is 7×10²1 m³ and B=0.2…

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Q: You put a diode in a microelectronic circuit to protect the system in case an untrained person…

A: Write the ideal diode equation as: Also, at room temperature T = 300 K.

Q: 6c.2. The integrate the electron density n is the integral of the density state using the 2D density…

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Q: What is the energy of an electron in the n=2 state for an gold atom,   , in units of eV. E = [x]…

A: Given that number of state for an gold atom and We have to determine the energy of an electron in…

Q: 1. a) Use the Fermi-Dirac distribution function with no approximations to determine the probability…

A: The Fermi-Dirac energy function gives the probability of an electron to posses energy according to…

Q: A 2-D square lattice has side, a=2.5 A with the fermi surface touching the first Brillouin zone.…

A: Solution:-    Given that,        Side of 2-D square lattice  a=2.5 A˙.       Fermi surface touching…

Q: Plot the electron distribution function N(E) versus energy in a metal at (a) T = 0 K and (b) T = 300…

A: According to the Fermi- Dirac the distribution function is written as; f(E) = 11+eE-EFkt Here we can…

Q: gc (E) = (m*n/π2*ћ3 )*sqrt(2m*n (E-Ec))   Note: Dimension of gc (E) = 1/m3*J Effective mass = m*n…

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Q: In an experiment to measure a for a certain gas, it was found that the steady current is 3.8x10 A at…

A: I can solve only 1 question in one session. The solution will be provided to the first question in…

Q: At a certain temperature, the electron and hole mobilities in intrinsic germanium are given as 0.43…

A: Electron mobility: e = 0.43 m2/Vs Hole mobility: h = 0.21 m2/Vs  Electron concentration = Hole…

Q: the electron mobility in a Si sample is determined to be 1300 cm²/V. sec at 300 K. What is the…

A: Using Einstein relation for semiconductors, We have   Where D = Diffusion coefficient, μ = electron…

Q: The same kind of semiconducting material used to make an LED can also be used to convert absorbed…

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Q: d) Show that the resistivity can be expressed (via the familiar notation) as, m p= ne't here m is…

A: d) Voltage =IR R= VI Force = eE Force = change in momentum = mvdτ mvdτ= eE  Drift velocity(vd) =…

Q: temperature. (a) If the concentration of holes is 2.4 x 1015 cm-3, determine the electron concentra-…

A: Given:-  Consider a germanium semiconductor at room temperature. a) If the concentration of holes is…

Q: A Fabry–Perot laser diode is operating at 1750 nm. The Laser Diode has a cavity length of 400 μm.…

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Q: Copper with an atomic radius of 0.128nm with a crystal structure of fcc type and atomic weight of…

A: In FCC crystal number of atoms per crystal cell is 4 Packing factor of FCC is 0.74 Volume of unit…

Q: at

A: Given: Critical temperature = 7.26 K Critical field = 5 x 105 A/m Temperature = 3 K

Q: I=1,(1-exp(-a x)

A: In the given equation  I=I01-exp-αxα=it is the absorption coefficient of the mediumI0=Initial…

Q: intrinsic coherent

A: Given, the energy gap of an element E=5.9×10-4ev=9.44×10-23J the fermi velocity VF=5.82×106m/s The…

Q: Find τ, μ for copper, given that p = 1.55 × 10 1e-8 n-m and the number of electrons for copper n =…

A: Given-  ρ = 1.55 × 10-8 Ω-mn = 2.54 ×1027 electron / m3

Q: Q2:- Germanium is doped with 6 x1015 donor atoms per cm3 at T = 300 K. The dimensions of the Hall…

A: Given that, donor atoms and temperature and dimensions of the hall device and current and voltage…