E 10V Given: R= 2 kN D1.Si, rg = 2 0, rR = 220 kn R3 = 6.8 kn D2:Si, rg = 5 0,r = 560 kN R2 = 1.2 kn R1 D2 Apply each of diode approximations and determine: a. Current through D1 b. Voltage across D2 c. Voltage across R3 ww D R3 R2 SAIN

For the last two parts, use the diagram to the right. d. V = -1.14V, R = 62, and the voltage across the diode is equal to 0.68V when it is "on". i V = e. V = -0.16V, R = 52, and the voltage across the diode is equal to 0.64V when it is "on". V= i = Vo ww R≤ KHI (Enter at least 3 significant digits. Each answer must be within 1% to be marked correct.) + ひ -

You have developed an idea for using a poly Si surface‐ micromachined cantilever. Initially, you designed a process flow for creating this simple structure, and the process flow is detailed in the figure below. ( cross section view and top view)There are several critical errors with this process (things that won’t work or won’t produce the result). Please find the critical errors in this process flow and, where possible, suggest alternate approaches. Do not worry about the accumulation of errors, but rather treat each step assuming that the structure up to that step could be created.This structure is actually quite simple to make. Develop a simpler process flow and associated masks to create the final structure. Be sure to show cross‐sectional and planar views of all key steps in the process.

Please show all work, thank you :)