Determine VCE and Ic in the voltage-divider biased transistor circuit of Figure (1),if ßdc = 100.

3. Design a four-resistor BJT bias circuit, similar to the one shown in Figure 2, such that V3 = 4 V and Ic = 1 mA. Assume VBE (on) = 0.7 V and B-150 for the transistor. 12V R1 R2 10k RC 5.6k Q2N2222 RE Figure 2 Note: Use PN2222A in Multisim

For the circuit given in figure below draw the collector characteristic curves for IB = 50,150 and 250 micro amperes on the same graph

Solve the collector-emitter voltage (VCE) of Figure 612. vc 8V R1 3.3ka Beta = 110 VEE R2 -12V 3.9ka Figure 612 1.48V O -0.7V O - 0.86V O 0.7V

Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE= 10 V. Use standard valued 5% resistors and draw a schematic %3D diagram of your design

Assume VRE 0.7 V and B-50 for the transistor in the circuit shown in the figure. For VCE = 2 V, the value of Rg is RB m B +12 V www Rc- 5 k C E VCE

Problem5: For the common base circurt shown in figure find I. and VCB. Assume transistor is Silicon (a-0.98) Ic Rp= 1.5 ko Rc= 1.2 kn VEE = 8 V. Vcc= 18 V

5. A JFET has a specified pinch-off voltage of 5 V. When VGs = 0, what is Vps at the point where the drain current becomes constant?

Collector characteristics for the Ge transistor If VEE =2 V, VCC =12V, and RC = 2k , size RE so that VCEQ = 6.4V. io mA ig-7 mA 6 mA 5 mA 4 mA Aic for hys Aig for he 3 mA Aic for hab Avea for h 2 mA I mA -10 -12 14 -16 -1- -20 "C

If VCC = +18 V, voltage-divider resistor R1 is 4.7 kOhms, and R2 is 1500ohms, Solve for base bias voltage:4.35 V8.7 V2.9 V0.7 V Solve for VBE: 8.7 V0.3 V4.35 V0.7 V