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Determine the steady state excess carrier concentrations of a Ge device that is doped with Np = 10'5 cm³, given that T, = 5 × 10** s, 7, = 107s, nị = 2 × 1013 cm", and gop = 10ª EHP cm³s''.

Determine the steady state excess carrier concentrations of a Ge device that is doped with Np = 10'5 cm³, given that T, = 5 × 10** s, 7, = 107s, nị = 2 × 1013 cm", and gop = 10ª EHP cm³s''.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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am doing revision for past year, answers with extra explanation will help a lot

Determine the steady state excess carrier concentrations of a Ge device that is doped with Np = 105 cm³, given that 7, = 5 x 10* s, 7, = 10" s, nį = 2 × 1013 cm*, and gop = 10²ª EHP cm³s'. ! gopt=
Transcribed Image Text:Determine the steady state excess carrier concentrations of a Ge device that is doped with Np = 105 cm³, given that 7, = 5 x 10* s, 7, = 10" s, nį = 2 × 1013 cm*, and gop = 10²ª EHP cm³s'. ! gopt=
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