Determine: re, Zb, Zi, Zo, Av
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Determine: re, Zb, Zi, Zo, Av
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- Consider the circuit shown below. The reverse saturation current is 1x10-¹6A and R₁=3kQ2. Vin 5V. D₁-D4 are the same. Vin P₁ # Ri M P₂ D3 Dy + Vout (a) What should be the current flow through the diodes? Use the full exponential model to analyze this. (b) What is Vout? Use the full exponential model to analyze this. (c) Suppose, Vin is increased by 0.1V. What will be the increase of Vout? Use the full exponential model to analyze this.Quèstion 3 NPN BJT is considered as two diodes their anodes are connected together. O True False A Moving to another question will save this response. ChpIn the circuit shown below. Let Vm-35 V and i-20 mA and VpQ -0.7 V: iD 3 kQ 0.8 kO Vmcos(@t)V For t Os, the current in the diode equals: Oa. 0 mA Ob. 4 mA Oc. 2 mA Od. 6 mA If t = T/4, then the current in the diode equals: Oa. 6.29 mA Ob. 5.03 mA Oc. 4,03 mA Od. 7.86 mA If t = T/2, then the current in the diode equals: Oa. 15.24 mA Ob. 13.24 mA Oc. 19.24 mA Od. 17.24 mA
- Date 03175996 28) A battery of emif 4V and grternal. xesistance 2n s joined to a desistor of 8 2 calculate the terminal potential difference. What additional xesistance in sedies with 8-2 sesistor Would produce a texminal pd of 3.6V? Taacher's Signalureier quesuon Will save this response. Quèstion 6 Power supply circuit is delivering 0.5 A and an average voltage 20 V to the load as shown in the circuit below. The ripple voltage of the half wave rectifier is 0.5 V and the diode is represented using constant voltage model. The smoothing capacitor value is equal to iL-DC =05A RL VLDC =20V 220V omsb 0.01 F 0.02 F 0.0167 F Hows b None of the above DEV ChpSolve for Vec, Veb, Ic, and identify the region of operation and explain why. Beta=200
- In the circuit shown below. Let V-33 V and i,-28 mA and Voo -0.7 V: iD Vcos(at)V For t = 0s, the current in the diode equals: Ca. 0 mA Cb. 2 mA Cc. 4 mA Od. 2 mA Ift = T/4, then the current in the diode equals: Ca. 8.92 mA Ob. 5.71 mA Oc 7.14 mA Od. 4.57 ma Ift- T/2, then the current in the diode equals: Ca. 10.39 mA Cb. 16.39 mA Oc 14.39 mA Od. 12.39 mAQ2: Calculate holes and electrons concentration in compensated silic p-type sample. If T=300 K, N=3×10²'/m², Na=1022/m². Assume that n=1.5x1016/m³. (Ans: 7x1021/m³, 3.2x101/m³)01: Calculate the drift current density in silicon sample. If T=300 K, Na=102'/m³, Na=1020/m³V, µ=0.85m2/V.s, Hp=0.04m?/V.s, E=35 V/cm.. (Ans: 6.8×104A/m2)
- Q.2 Te diodes m the Cir Cuit of 6iG. below are icdead , Drow the Tran sfer characteristic for 2ovSVi s 2ov ? Di Ri R3 lovFor the below shown rectifier configuration, find the expression for the average value of voltage across the load resistor R, if the supply voltage Vs = Vm sinwt and firing angle = a. RLOAD Vm/T Cosa Vm/TT (1+cosa) O 2Vm/TT Cosa O 2Vm/TT (1+cosa) O O O OWhich of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and wider temperature ranges than Ge diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes.