Design a common-source NMOS amplifier as shown in Figure 2 to give a passband gain of 20 Rp||RL , RL > Rp and RG very large.Rp = 10kN.4.98 x 10-3Im%3D100kN, R.5kN%3DR2 = 500KN, RLfL = 9.9k.Hz, fc2 = fL/10%3D%3DC1 = 8nFRci = R1 = 110kN+VDDRpC2RGR,M1RSRIRLRSR2CsZin

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Design a common-source NMOS amplifier as shown in Figure 2 to give a passband gain of 20 < ApB <30. Zin(mid) 2 100kN, a low 3-dB frequency of fr < 10kHz, and a high 3-dB frequency of fH = 200kHz. Assume Ips = 12.5mA, ID = ImA, and V, =-3.5V ro > Rp||RL. RL > RD and RG very large. Rp 10kN. Im = 4.98 x 10-3 R2 500kN, RL = 100kN. R, = 5kN %3D fl 9.9kHz, fc2 = fL/10 %3D %3D C1 = 8nF Rci = R1 = 110kN +VpD Rp C2 RG R, M1 RSRI RL Vo RSR2 Cs Zin

Design a common-source NMOS amplifier as shown in Figure 2 to give a passband gain of 20 < ApB <30. Zin(mid) 2 100kN, a low 3-dB frequency of fr < 10kHz, and a high 3-dB frequency of fH = 200kHz. Assume Ips = 12.5mA, ID = ImA, and V, =-3.5V ro > Rp||RL. RL > RD and RG very large. Rp 10kN. Im = 4.98 x 10-3 R2 500kN, RL = 100kN. R, = 5kN %3D fl 9.9kHz, fc2 = fL/10 %3D %3D C1 = 8nF Rci = R1 = 110kN +VpD Rp C2 RG R, M1 RSRI RL Vo RSR2 Cs Zin

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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