Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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Design a CMOS logic gate
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- create a 3 input or gate using pmos and nmos architecturearrow_forwardLet's design CMOS logistic gate F (A, B, C, D) = A + (B•C) + D. For PMOS transistors and NMOS transistors of the same size, consider a fabrication process that is four times the resistance of the PMOS transistor. Assume that all diffusion areas have no sharing. Unit inverter refers to a minimum-sized inverter that makes rise resistance (also called pullup resistance) and fall resistance (also called pulldown resistance) equal by sizing the CMOS inverter shown in the following figure with PMOS:NMOS = 4:1. Vin VDD J -Vout GND (a) Draw the transistor-level schematic of CMOS logic gate F consisting of PMOS and NMOS. (b) In the worst case scenario, size the PMOS and NMOS transistors of CMOS logic gate F to have the same rise and fall resistance as unit inverter. (c) Find the logical effect gA and intrinsic delay p of CMOS logic gate F with respect to Input A.arrow_forward
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