D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit toestablish a de emitter current of 1 mA and provide the highest possible voltage gain while allowingfor a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies.R₂4+VccRE-VEEFigure 7.53 Biasing the BJT using two power supplies. Resistor R isneeded only if the signal is to be capacitively coupled to the base. Otherwise,the base can be connected directly to ground, or to a grounded signal source,resulting in almost total 8-independence of the bias current.

Given: IE=1 mAVC=±2 VVIN=10 V, -5 V Find: Design the circuit to obtain an emitter current of IE=1 mA…

D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowi for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. Ra +1 +Vcc Rc RE Figure 7.53 Biasing the BJT using two power supplies. Resistor R, is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source,

D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowi for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. Ra +1 +Vcc Rc RE Figure 7.53 Biasing the BJT using two power supplies. Resistor R, is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source,

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Example 7.2 -15 Consider an amplifier circuit using a BJT having Is = 10 power supply Vcc= 10 V. A, a collector resistance Rc = 6.8 k2, and a (a) Determine the value of the bias voltage VBE required to operate the transistor at VCE = 3.2 V. What is the corresponding value of 1? (b) Find the voltage gain A, at this bias point. If an input sine-wave signal of 5-mV peak amplitude is superimposed on VBE, find the amplitude of the output sine-wave signal (assume linear operation). (c) Find the positive increment in UBE (above VBE) that drives the transistor to the edge of saturation, where UCE = 0.3 V. (d) Find the negative increment in VBE that drives the transistor to within 1% of cutoff (i.e., to UCE = 0.99Vcc).
In the self-bias circuit of Figure 7.80 a. Draw the transfer characteristic curve of the device. b. Draw additional circuit equations on the same graph. Find c.lDQ and VGSQ. d. Calculate VDS , VD, VG, Vs. ...
7.33 Figure P7.33 shows a discrete-circuit amplifier. The input signal vig is coupled to the gate through a very large capacitor (shown as infinite). The transistor source is connected to ground at signal frequencies via a very large capacitor (shown as infinite). The output voltage signal that develops at the drain is coupled to a load resistance via a very large capacitor (shown as infinite). All capacitors behave as short circuits for signals and as open circuits for de. (a) If the transistor has V, = 1 V, and k, = 4 mA/V', verify that the bias circuit establishes Ves = 1.5 V, I, =0.5 mA, and V, = +7.0 v. That is, assume these values, and %3D verify that they are consistent with the values of the circuit components and the device parameters. (b) Find g„, and r, if V, = 100 V. (c) Draw a complete small-signal equivalent circuit for the amplifier, assuming all capacitors behave as short circuits at signal frequencies. (d) Find R, V/vig, v,/Vg» and v,/vig- +15 V 10 MN 16 k2 Rie = 200…
What is the product of bandwidth called the maximum gain? And its usefulness in testing a common-biased emitter amplifier using the base impedance method ē 7:22 /
Consider the common-base BJT amplifier in Figure 7. Assume that the following values remain constant during the operating conditions, B DC=100, and VBE = 0.5V, Draw the dc equivalent circuit for the BJT amplifier circuit, and calculate the following dc values for the amplifier:i. VB ii. VE iii. IE iv. ICv. IB vi. VC
Consider the common-base BJT amplifier in Figure 7. Assume that the following valuesremain constant during the operating conditions, B AC= 110 and VBE = 0.5V, Draw the ac equivalent circuit for the BJT amplifier circuit, and calculate the following ac values for the amplifier:i. R outii. R in(emitter) iii. Av iv. Ai v. Ap
In single transistor amplifier design, it is observed that the voltage gain will always decrease as the load resistance increases. True False The saturation region of MOSFET indicates that the drain current no longer depends on the source-drain voltage while the saturation region of BJT indicates that the collector current no longer depends on the collector-emitter voltage. True False A bipolar junction transistor can be connected to behave like a diode while a field effect transistor can not be connected to behave like a diode. True False A voltage follower circuit is usually designed to have the power gain slightly less than 1 with any passive load. True False A clipper circuit regulates DC voltage input while a clamp circuit regulates AC voltage input. True False
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. R₂4 +Vcc RE -VEE Figure 7.53 Biasing the BJT using two power supplies. Resistor R is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source, resulting in almost total 8-independence of the bias current.
B- True and false (if false what is the correct with the reason) 1- Current in a BJT consists of both free electrons and holes. 2- Field-effect transistors are bipolar devices. 3- JFET has low input resistance. 4- Reverse bias of a JFET decrease the channel resistance. 5- The common-base amplifier has a high voltage gain, but it has a very low input resistance and its current gain is approximately 1.
1.The voltage measured from the collector to the emitter is the sum of the voltage base-emitter plus the voltage collector-base. Select one: True Or False 2.A decrease in base current of a C-E amplifier causes the voltage measured between the emitter and the collector to increase. Select one: True Or False 3.A FET is ..............controlled device whereas a bipolar transistor is a.............controlled device. Answer:
7.120 Figure P7.120 shows a scheme for coupling and amplifying a high-frequency pulse signal. The circuit uses two MOSFETS whose bias details are not shown and a 50-2coaxial cable. Transistor Q1 operates as a CS amplifier and Q2 as a CG amplifier. For proper operation, transistor Q2 is required to present a 50-2 resistance to the cable. This situation is known as “proper termination" of the cable and ensures that there will be no signal reflection coming back on the cable. When the cable is properly terminated, its input resistance is 50 2. What must gm2 be? If Qi is biased at the same point as Q2, what is the amplitude of the current pulses in the drain of Q1? What is the amplitude of the voltage pulses at the drain of Q1? What value of RD is required to provide 1-V pulses at the drain of Q2? DD Rp 50-N coaxial cable R2 = 50 2 5 mV nL Figure P7.120