Consider silicon at T = 300 K doped with Nd= 6 X 10¹7 cm-³. Gold has been combined with the semiconductor to create a Schottky barrier with BO = 1.09 V. Calculate the space charge width in the semiconductor region.

Delmar's Standard Textbook Of Electricity
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Chapter1: Atomic Structure
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Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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Consider silicon at T = 300 K doped with Nd= 6 X
10¹7 cm³. Gold has been combined with the
semiconductor to create a Schottky barrier with
PBO = 1.09 V. Calculate the space charge width in
the semiconductor region.
Α) Χη
5.142 x 10-6 cm
-6
B) Xn
2.692 x 10 cm
C) Xn = 8.868 × 10-6 cm
1.536 x 10-6 cm
=
D) Xn
E) Xn =
F) Xn
-6
4.622 × 10- cm
= 2.797 x 10-6 cm
Transcribed Image Text:Consider silicon at T = 300 K doped with Nd= 6 X 10¹7 cm³. Gold has been combined with the semiconductor to create a Schottky barrier with PBO = 1.09 V. Calculate the space charge width in the semiconductor region. Α) Χη 5.142 x 10-6 cm -6 B) Xn 2.692 x 10 cm C) Xn = 8.868 × 10-6 cm 1.536 x 10-6 cm = D) Xn E) Xn = F) Xn -6 4.622 × 10- cm = 2.797 x 10-6 cm
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