Consider a Gunn diode fabricated using a lightly doped 3.19 μm thick n' layer that is sandwiched between two highly doped n* layers. What is the transit time frequency if the electron velocity is 0.53 x105 ms 12 Express your answer to 2 d.p and in the unit of GHz.

Consider a Gunn diode fabricated using a lightly doped 3.19 μm thick n' layer that is sandwiched between two highly doped n* layers. What is the transit time frequency if the electron velocity is 0.53 x105 ms 12 Express your answer to 2 d.p and in the unit of GHz.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Consider a Gunn diode fabricated using a lightly doped 3.19 µm thick n layer that is sandwiched between two highly doped n* layers. What is the transit time frequency if the
electron velocity is 0.53 x105 ms ¹? Express your answer to 2 d.p and in the unit of GHz.

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