A gate oxide is grown in 640 torr of water vapour at 1050o C. The oxide is grown on a bare (100) silicon wafer. The oxidation time is 2 mins. i) Assuming the tau (τ) value is zero, use the Deal–Grove model to predict the oxide thickness. Do not use design curves. For simplicity, when estimating B and B/A, assume the values are a linear function of temperature, rather than the actual exponential function. ii) When this process is run, the measured oxide thickness is 0.1 µm, but the oxidation rate after 2 mins agrees with the B/A ratio. Find the value of τ that should be used for these process conditions to allow for the initial rapid growth regime

A gate oxide is grown in 640 torr of water vapour at 1050o C. The oxide is grown on a bare (100) silicon wafer. The oxidation time is 2 mins. i) Assuming the tau (τ) value is zero, use the Deal–Grove model to predict the oxide thickness. Do not use design curves. For simplicity, when estimating B and B/A, assume the values are a linear function of temperature, rather than the actual exponential function. ii) When this process is run, the measured oxide thickness is 0.1 µm, but the oxidation rate after 2 mins agrees with the B/A ratio. Find the value of τ that should be used for these process conditions to allow for the initial rapid growth regime

Materials Science And Engineering Properties

1st Edition

ISBN:9781111988609

Author:Charles Gilmore

Publisher:Charles Gilmore

Chapter4: Temperature Effects On Atom Arrangements And Atom Motion

Section: Chapter Questions

Problem 4.5P

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