(c) The circuit in Figure 2.1 is a simple voltage-divider configuration that uses two resistors in series to create an output voltage, Vo which is a fraction of the input voltage, V₁. The basic circuit laws dictate that the circuit current, I and the resultant voltage division output, Vo of this basic circuit configuration can be expressed as: Pre-Lab workspace Vo Table 2.1 V₁ | = Rx + Ry I If the input voltage, V₁= 15 volts, and resistors Rx = 10 k and Ry = 5.0 kN, find the values of the output voltage, Vo and the circuit current, I by using the above expressions. Record the results in Table 2.1. Rx Vo Ry Ry Vo = Ry Ry + Rx .V₁ Figure 2.1: Simple voltage-divider circuit Rx Ry + Vo For the resistor values selected for circuits in Figure 2.0 and Figure 2.1, and comparing your results in Table 2.0 with those in Table 2.1, answer the following questions: (i) Why would the value of I = I₁ and Vo = V₂ (or V3)? Explain. (ii) Would it be reasonable to conclude that resistor, Ry value chosen must be equivalent to the value of parallel resistors, R₂ and R3 combined? Why?

c) Using minimum number of components, design a voltage divider which can deliver 1 W at 100V, 2W at -50V and 1.6W at -80V. The voltage source has an internal resistance of 200 Q and supplies a current of 100mA. What is the open - circuit voltage of the voltage source? All resistance in ohm.

In the circuit below, the currents through the four resistors are as indicated. Use the junction rule to write the equations representing the relationship between the currents at the point d. (Use the following as necessary: 14, 15, and 16.) 16=14+15 X = 0 &₁ 15 R4 d E₂ =&

The images are attached with the question and circuit. Please include a drawing with the solution. Thank you

V1 R1 V2 Da Db R2 www V3 Given that R1=2k, R2=1k, and Da and Db are Si Diodes: a. What is V3 in terms of V1 when Da is ON? b. What is V3 in terms of V1 when Db is ON? c. What is V3 in terms of V1 when Da and Db is OFF?

A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that = ХА — 2.0 еV, хв — 1.5 eV, EрА %3D 2.9eV, Erв %3D 2.0 еV, EgA 3D 1.3 eV, Egв — 2.8 eV If a small positive voltage is applied to Semiconductor A, and Semiconductor B is grounded, explain how the potential barrier changes in comparison with the thermal equilibrium condition. The vacuum level Хв ХА Есв ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B