(i) By mathematical approach, prove that the transistor Q-points, Vosq = 2.14 V and IpQ=2.57 mA. (ii) Draw the small-signal ac equivalent circuit at middle frequency. (iii) Calculate gm, Zin and Zout (iv) Derive the equation for voltage gain, Aus = and calculate the voltage gain, Avs. (v) If Rst is short-circuited, what will be the effect towards Aus? (c) Figure Q.1 shows a MOSFET amplifier. Given that: Vos (th) 2 V, k = 130 mA/V2 and rasco, Vs + VDD (+12 V) RD 3 ΚΩ C2 10 µF Rsig 500 Ω CI 1 µF HH RG 100 ΚΩ www + VGSQ RSI 0.6 ΚΩ www IDQ Zin RS2 C3 0.9 ΚΩ 22 µF HF RL 5 ΚΩ Zout - Vss (-6 V) Figure Q.1. MOSFET amplifier circuit Vo

A. For the configuration shown below in 4(A), find the small signal voltage gain (Voutp-Voutm)/Vin B. For the configuration shown in 4(B), find the following parameters (a) DC value of output voltage, (b) input common mode range and (c) small signal voltage gain when all transistors are in saturation vou/Vin as indicated in the diagram; Assume no body bias on M1 ad M2 For this problem ONLY, assume the following device parameters V7, = \V| = 0.5V;K, = k ,' = 100 µA / V²,a, = a, = 0.01 VDD = 3V (10/1) M, M. (10/1) (10/1) M, |M, (10/1) Voutp 20kΩ м, (200/1) м, м, (10/1) м, Vin (1/1) м, M. (10/1) + Vin DC VAN M, 100HA (1/1) M, M, (10/1) (A) (B) V. =-1V

Why is there a difference in the beta value? (D. C) and the beta (A. C) value in some transistor output characteristic schemes.

For the p-channel JFET circuit in the Figure, the transistor parameters are: /oss = 2 mA, Vp = |1.75| V. (a) Determine Ipo and Vspo- (b) Give the small signal model (c) Determine the small-signal voltage gains Av = vo/vi QUESTION I: For the p-channel JFET circuit in the Figure, the transistor parameters are: Ioss = 2 mA, Vp = |1.75| V. (a) Determine Ipo and Vspo- (b) Give the small signal model (c) Determine the small-signal voltage gains Av = vo/vi VDD = 10 V Rg = 5 k£2 R1 = 90 kQ %3D Cc2 RL = 10 k2 R2 = 110 k2 ww