Below is a schematic showing the cross-section of a Si n+ p junction solar cell. The area of the solar cell is 3 cm2 . Then n+ -type region is doped with a donor concentration ND = 2×1019 cm-3 and the p-type region is doped with an acceptor concentration NA = 1017 cm-3 . The intrinsic carrier concentration ni of Si at T = 300 K is 1.5x1010 cm-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively. a) Calculate the built-in potential Vbi of the p-n junction at 300 K in this solar cell. b) Calculate the depletion width W under thermal equilibrium at 300 K. c) Derive the expression of the power output as function of forward bias voltage V. d) Estimate the maximum power output.

Question

Below is a schematic showing the cross-section of a Si n⁺ p junction solar cell. The area of the solar cell is 3 cm² . Then n⁺ -type region is doped with a donor concentration N_D = 2×10¹⁹ cm^-3 and the p-type region is doped with an acceptor concentration N_A = 10¹⁷ cm^-3 . The intrinsic carrier concentration n_i of Si at T = 300 K is 1.5x10¹⁰ cm^-3 and the dielectric constant εr of Si is 12. In the conditions illustrated below, under AM1.5G illumination, the ammeter reads a current flow of 135 mA and the voltmeter reads a voltage of 0.62 V, respectively.