5. The problem with the simple biasing circuit in problem 4 is that it's very sensitive to variations inthe transistor parameters. The bias circuit shown below is an improved design with less sensitivityto variations in transistor parameters. Assume Kn = 25μA/V², VTN =1V.R2 31.5ΜΩVEQC.GRo 375 ΚΩREQR, 31ΜΩ R, 3 39 ΚΩM1a. Re-draw the gate biasing circuit with its Thevenin equivalent just like in problem 4(a), what areVEQ and REQ?GRo 375 ΚΩSR₂M1+39 ΚΩVDD = 10V+VDD= 10Vb. Find the operating point (ID, Vòs) for the MOSFET. Again, first assume a region of operation,then determine the operating point, then check to make sure the assumption was correct.Now assume that K₁ decreases by 20% to 20µA/V², what is the effect on the operating point(IDS, VDS)?

Answered: Image /qna-images/answer/0c7598f7-7a89-443f-8a9a-09c4bf9ac3fe.jpg

b. Find the operating point (ID, VDs) for the MOSFET. Again, first assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₂ decreases by 20% to 20μA/V², what is the effect on the operating point (IDS, VDS)? C.

b. Find the operating point (ID, VDs) for the MOSFET. Again, first assume a region of operation, then determine the operating point, then check to make sure the assumption was correct. Now assume that K₂ decreases by 20% to 20μA/V², what is the effect on the operating point (IDS, VDS)? C.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question

5. The problem with the simple biasing circuit in problem 4 is that it's very sensitive to variations in
the transistor parameters. The bias circuit shown below is an improved design with less sensitivity
to variations in transistor parameters. Assume Kn = 25μA/V², VTN =1V.
R2 31.5ΜΩ
VEQ
C.
G
Ro 375 ΚΩ
REQ
R, 31ΜΩ R, 3 39 ΚΩ
M1
a. Re-draw the gate biasing circuit with its Thevenin equivalent just like in problem 4(a), what are
VEQ and REQ?
G
Ro 375 ΚΩ
S
R₂
M1
+
39 ΚΩ
VDD = 10V
+
VDD
= 10V
b. Find the operating point (ID, Vòs) for the MOSFET. Again, first assume a region of operation,
then determine the operating point, then check to make sure the assumption was correct.
Now assume that K₁ decreases by 20% to 20µA/V², what is the effect on the operating point
(IDS, VDS)?

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Step 1: (a) calculate VEQ and REQ

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Step 2: (b) calculate the operating point ID and VDS for the MOSFET

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Step 3: calculate effect on the operating point when Kn decrease

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