Au is face-centered cubic metal with lattice constant 4.08 Å. If the atomic mass of Au is approximately 197 calculate the number of conduction electrons per unit volume (electrons/cm) and number of electrons per unit mass (electrons/g). Assume that each Au atom donates one conduction electron.
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- Question A7 Aluminium (Al) has a face-centered cubic structure, with lattice parameter a = 4.05 × 10-¹⁰ m. If each Al atom loses three electrons to make a free electron gas in the metal, what is the electron density ne?(a) How many silicon atoms are there in each unit cell? (b) How many silicon atoms are there in one cubic centimeter? (c) Knowing that the length of a side of the unit cell (the silicon lattice constant) is 5.43 Å, Si atomic weight is 28.1, and the Avogdaro's number is 6.02 × 10²3 atoms/mole, find the silicon density in g/cm³.Consider a conductor. If one of the terminals is subject to a higher potential while the other terminal to a lower potential, which of the following happens? The free electrons in the conductor will move and concentrate on the side with higher potential. The free electrons in the conductor will move and concentrate on the side with lower potential. The valence electrons will be dislodged from their parent atoms and move in random directions in the conductor. The answer cannot be found on the other choices.
- The minority carriers in N-type Si, having a conductivity of (0.01(2.m)-1}, and mobility of electron=D0.36 (m2/(v.sec)).(ni=1.45*10^10 /m3) is O 1.74 x 1017/m3 O 17.36*10^16 /m3 O 1211.117512 /m3 O 18.45*10^4 /m3 O Other:To improve the semiconducting characteristics of GaAs, 1.31 x 10^15 atoms of Be are incorporated into the material. Be has an ionization energy of 0.6eV. What is the concentration/s of the majority and minority charge carrier?Determine the amount of arsenic that must be combined with 1 kg of gallium to produce a p-type semiconductor with an electrical conductivity of 500 ohm21 · cm21 at 25°C. The lattice parameter of GaAs is about 5.65 Å, and GaAs has the zincblende structure.
- The Boltzmann constant is k = 8.617 * 10-5 eV/K. For a metallic solid at room temperature (293 K), what is the probability that an electron state is occupied if its energy is 0.0250 eV below the Fermi level?The concentration of acceptor silicon atom is 5×10^21 m^-3 at 300°k . How far from the edge of the valence band the fermi level if mh*=0.6mIn two dimensions, two metals A and B, have the number density of free electrons in the ratio n₁: n₁ = 1:2 B The ratio of their Fermi energies is (a) 2:3 (b) 1:8 (c) 1:2 (d) 1 : 4