Assume that the gate oxide between an n+ poly-Si gate and the p-substrate is II A thick and Na = lEI8 cm3. (a) What is the VI of this device? (b) What is the subthreshold swing, S? (c) What is the maximwn leakage current if W = I µm. L = 18 nm? (Assume Ids = 100 W/L (nA) at Vg = Vt.)

(c) If the gate oxide were destroyed by a static electricity discharge, speculate on how the current readings might be different from those that were observed.Be detailed in your response. (d)Using an electron mobility value of μn= 800 cm2/V-s and a gate oxide thickness of xox= 80 nm, compute the value of Kn= μnCox.From this value and some of the simulateddata points (where the drain current is saturated) make a rough estimate of the W/L ratio for the 2N7000 MOSFET. Does this W/L ratio seem reasonable?