Answer True for correct sentences and False for incorrect sentences 1- The diffusion current is produced as a result of a variation in the concentration of charge carriers, as the charge carriers move from places with high concentration to places with low concentration under the influence of the applied electric field 2- The silicon atom (14) covalently bonds with the carbon atom (6) to form a Sic. crystal 3- To achieve the process of electrical conduction in semiconductor materials, foreign elements are introduced into the pure crystal by a process known as grafting 4- Current can only pass through the adjusting junction if the work function of the metal is greater than the work function of the semiconductor.

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Answer True for correct sentences and False for incorrect
sentences
1- The diffusion current is produced as a result of a
variation in the concentration of charge carriers, as the
charge carriers move from places with high concentration
to places with low concentration under the influence of the
applied electric field
2- The silicon atom (14) covalently bonds with the carbon
atom (6) to form a SiC.
crystal
3- To achieve the process of electrical conduction in
semiconductor materials, foreign elements are introduced
into the pure crystal by a process known as grafting
4- Current can only pass through the adjusting junction if
ork fund
th
of the metal is greater than the work
function of the semiconductor.
Transcribed Image Text:Answer True for correct sentences and False for incorrect sentences 1- The diffusion current is produced as a result of a variation in the concentration of charge carriers, as the charge carriers move from places with high concentration to places with low concentration under the influence of the applied electric field 2- The silicon atom (14) covalently bonds with the carbon atom (6) to form a SiC. crystal 3- To achieve the process of electrical conduction in semiconductor materials, foreign elements are introduced into the pure crystal by a process known as grafting 4- Current can only pass through the adjusting junction if ork fund th of the metal is greater than the work function of the semiconductor.
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