Answer the following questions based on the C-V curve for an MOS capacitor shown in Fig. 5–39. The area of the capacitor is 104 um?. C(pF) A E QS C-V C ID B HF C-V → V¿(V) -1 0.5 1 FIGURE 5-39 (a) Is the substrate doping N type or P type? (b) What is the thickness of the oxide in the MOS capacitor? (c) What is the doping concentration of the substrate, Nsub? (d) What is the value of the capacitance at position C on the C-V curve shown above? (e) Sketch the energy band diagram of the MOS structure at positions A, B, C, D, and E on the C-V curve. (f) At location B on the C-V curve, what is the band bending, ø,?

A ceramic capacitor has a value of C=10,000 pF. The capacitor consists of a dielectric disc between two paralell metal disc plates. The dielectric disc has a relative permittivity of 40. The diameter of the disc plates is 1 cm. The voltage across the plates is 100 V. The charge on one plate contributes 50% of the total field between the plates. Determine the total force one plate exerts on the other plate in kN. Round off your answer to one decimal.

help with all parts of the question thanks

question in photo  please